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RN1112FT(TE85L,F)

Part No RN1112FT(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 05+
Reference case SOT-523
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 756085-RN1112FT(TE85L,F)
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1112FT(TE85L,F) CAD Model

Description

The RN1112FT(TE85L,F) is a silicon epitaxial planar type PNP transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for high-speed switching and amplification applications. Its compact surface-mount package makes it ideal for dense circuit board layouts.

Applications

  • High-speed switching circuits
  • Amplification circuits
  • Inverter circuits
  • Driving circuits for small loads
  • Mobile devices
  • Portable electronics

Features

  • Low saturation voltage: This feature ensures minimal power loss during switching operations, enhancing overall efficiency.
  • High-speed switching: Optimized for fast switching speeds, reducing switching losses and improving circuit responsiveness.
  • Small surface-mount package: Facilitates compact designs and efficient use of board space.
  • High collector current capability: Provides adequate current handling capacity for driving various loads.
  • Excellent hFE linearity: Offers stable amplification characteristics over a wide range of collector currents.

Benefits

  • Improved energy efficiency due to low saturation voltage.
  • Enhanced circuit performance with high-speed switching.
  • Reduced board space requirements with compact packaging.
  • Reliable performance in demanding switching and amplification tasks.
  • Stable and predictable amplification behavior.

Additional Details

The RN1112FT(TE85L,F) features a collector-emitter voltage (VCEO) of -50V, a collector current (IC) of -0.15A, and a power dissipation (PC) of 0.2W. It is offered in a SOT-23 (or equivalent) surface-mount package. The transistor's transition frequency (fT) is typically around 180 MHz, enabling its use in high-frequency applications. The DC current gain (hFE) is typically in the range of 85 to 200. The operating temperature range is -55°C to +150°C.

This transistor is commonly used in a variety of consumer electronic devices and industrial control systems where efficient and reliable switching performance is required. Its small size and robust electrical characteristics make it a versatile choice for modern circuit designs.

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