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GT50N322A

Part No GT50N322A
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description PB-F IGBT / TRANSISTOR TO-3PN IC
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Toshiba Semiconductor and Storage
Package Tray
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 1000 V
Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
Power - Max 156 W
Input Type Standard
Reverse Recovery Time (trr) 800 ns
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Standard Package 50 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 139247-GT50N322A
Ultra Librarian 3D Model Ultra Librarian GT50N322A CAD Model

Description

The 139247-GT50N322A is a high-power single IGBT transistor in the Discrete Semiconductor Products category. It has a maximum power rating of 156 W and a voltage breakdown of 1000 V.

  • Maximum Collector Current: 50 A
  • Pulsed Collector Current: 120 A
  • Vce(on): 2.8V @ 15V, 60A
  • Mounting Type: Through Hole
  • Package: TO-3P-3, SC-65-3
  • Manufacturer: Toshiba Semiconductor and Storage
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7098 $51.4862
45+ $2.2235 $100.0575
70+ $2.1540 $150.7800
96+ $2.0845 $200.1120
125+ $2.0150 $251.8750
167+ $1.8066 $301.7022
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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