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Same model may have multiple batches, images only for reference.
GT10J312 Real Image
Same model may have multiple batches, images only for reference.

GT10J312

Part No GT10J312
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description IGBT 600V 10A 60W TO220SM
Datasheet
GT10J312 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 10A
Pulsed Collector Current 20A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 10A
Maximum Power Dissipation 60W
Input Type Standard
Turn-on and Turn-off delay time 400ns/400ns
Testing Conditions 300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr) 200ns
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-220SM
Win Source Part Number 067736-GT10J312
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian GT10J312 CAD Model

Description

The Toshiba Semiconductor and Storage GT10J312 is an SMD (SMT) mounted IGBT transistor.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 10A
  • Collector-Emitter Saturation Voltage: 2.7V @ 15V and 10A
  • Maximum Power Dissipation: 60W
  • Reverse Recovery Time (trr): 200ns
  • Turn-On/Turn-Off Delay Time: 400ns/400ns
  • Case/Package: TO-220SM
  • Operating Temperature: 150°C (TJ)
  • Supply and Demand Status: Limited

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