The DSR01S30SL is a Schottky Barrier Diode from Toshiba Semiconductor and Storage. This diode is designed for high-speed switching applications and features a low forward voltage drop, making it suitable for various power management and rectification tasks. Its compact surface-mount package allows for efficient board space utilization.

Applications

• High-frequency rectification
• Switching mode power supplies (SMPS)
• DC-DC converters
• Reverse polarity protection
• Free-wheeling diodes in inductive loads

Features

• Low forward voltage drop (VF) to minimize power loss.
• High surge current capability to withstand transient conditions.
• Fast switching speed for efficient high-frequency operation.
• Surface-mount package for automated assembly.
• High reliability
• RoHS compliant

Benefits

• Improved efficiency in power conversion due to low forward voltage drop.
• Enhanced system reliability through high surge current capability.
• Reduced switching losses in high-frequency applications because of fast switching speed.
• Compact design suitable for space-constrained applications.
• Ease of assembly for high-volume manufacturing.

Specifications

The DSR01S30SL typically features a maximum repetitive peak reverse voltage (VRRM) of 30V and a maximum average forward current (IF(AV)) of 1A. It also offers a low forward voltage drop, typically around 0.4V at 1A. The operating junction temperature ranges from -40°C to +125°C. The device is available in a small surface-mount package, commonly a SOD-323 or similar footprint. Its fast reverse recovery time minimizes losses during switching transitions. It's designed for automated assembly and is RoHS compliant.