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DF2S6.8SC

Part No DF2S6.8SC
Manufacturer Toshiba Semiconductor and Storage
Catalog TVS - Diodes
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 12+Rohs
Reference case SC20201
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 752892-DF2S6.8SC
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DF2S6.8SC CAD Model

Description

The DF2S6.8SC is a transient voltage suppressor (TVS) diode manufactured by Toshiba Semiconductor and Storage. It is designed to protect sensitive electronic components from voltage surges caused by electrostatic discharge (ESD), lightning, and other transient events. This diode offers fast response times and low clamping voltage, ensuring effective protection without compromising system performance.

Applications

  • ESD Protection: Protects input/output (I/O) ports of electronic devices from ESD events.
  • Surge Protection: Provides surge protection for communication lines and power lines.
  • Automotive Electronics: Protects sensitive components in automotive control units.
  • Portable Devices: Safeguards smartphones, tablets, and other portable devices from voltage surges.

Features

  • Fast Response Time: Responds quickly to transient voltage events.
  • Low Clamping Voltage: Limits the voltage across protected components during surge events.
  • Low Capacitance: Minimizes signal distortion in high-speed data lines.
  • High Surge Current Capability: Withstands large surge currents without damage.
  • Small Package Size: Available in a compact package for space-constrained applications.

Benefits

  • Enhanced System Reliability: Protects sensitive components from voltage surges, improving system reliability.
  • Reduced Downtime: Prevents damage from transient events, reducing downtime and maintenance costs.
  • Improved System Performance: Low capacitance ensures minimal signal distortion in high-speed data lines.
  • Compact Design: Small package size allows for easy integration into space-constrained applications.
  • Versatile Application: Suitable for a wide range of ESD and surge protection applications.

Additional Details

The DF2S6.8SC typically features a specific breakdown voltage and clamping voltage. It is available in various package options. The device's performance characteristics, including surge current rating and capacitance, can be found in the product datasheet provided by Toshiba Semiconductor and Storage. Proper PCB layout techniques should be employed to minimize inductance and maximize protection effectiveness. Detailed technical specifications, including maximum ratings and electrical characteristics, are available in the official datasheet.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16,670+ $0.0035 $58.3450
33,335+ $0.0035 $116.6725
50,000+ $0.0035 $175.0000
66,670+ $0.0035 $233.3450
83,335+ $0.0035 $291.6725
150,000+ $0.0023 $345.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 16670 pcs
Order Increment : 1 pcs
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