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3SK320(TE85L)

Part No 3SK320(TE85L)
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts (0 - 9)
Sample
Rohs State Need to verify
ECAD Module
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Number of Pins 4
RoHS Non-Compliant
Win Source Part Number 1038460-3SK320(TE85L)
Categories OEM Parts(0-9)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 3SK320(TE85L) CAD Model

Description

The 3SK320(TE85L) is a silicon N-channel dual gate MOS field-effect transistor (MOSFET) manufactured by Toshiba Semiconductor and Storage. This MOSFET is specifically designed for high-frequency amplification and mixing applications. It is commonly used in radio frequency (RF) circuits, television tuners, and communication systems due to its high gain, low noise characteristics, and excellent linearity.

Applications

  • RF amplifiers in communication equipment
  • Mixers in radio and television tuners
  • Oscillators for high-frequency circuits
  • Satellite broadcasting equipment
  • Spectrum analyzers

Features

  • N-channel dual gate MOSFET
  • High gain at high frequencies
  • Low noise figure for sensitive receivers
  • Excellent linearity to minimize distortion
  • Small package size for compact designs

Benefits

  • Enhances the sensitivity of RF receivers
  • Improves the signal-to-noise ratio in communication systems
  • Reduces signal distortion for clearer transmission
  • Enables compact and efficient circuit designs
  • Increases overall system performance and reliability

Additional Details

The Toshiba 3SK320(TE85L) MOSFET is designed to provide high-performance amplification with minimal noise in high-frequency circuits. The dual-gate structure allows for enhanced control over the channel current, improving gain and reducing feedback capacitance. The low noise figure ensures that weak signals are amplified without adding significant noise, making it suitable for sensitive receiver applications. The excellent linearity minimizes distortion, ensuring that the amplified signal retains its original shape. The "TE85L" suffix likely refers to the specific packaging and taping options for automated assembly. This MOSFET is designed to operate within specified voltage and current ranges, and its performance characteristics are typically detailed in the Toshiba datasheet. It is suitable for applications requiring high gain, low noise, and stable operation in high-frequency environments. The dual gate configuration enhances its ability to function effectively as a mixer, converting signals from one frequency to another with minimal distortion and high efficiency.

The 3SK320(TE85L) MOSFET from Toshiba provides reliable and efficient performance in a variety of high-frequency electronic systems, offering a combination of high gain, low noise, and excellent linearity.

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