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3SK260-GR

Part No 3SK260-GR
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts (0 - 9)
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RoHS Non-Compliant
Win Source Part Number 1038454-3SK260-GR
Categories OEM Parts(0-9)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 3SK260-GR CAD Model

Description

The Toshiba Semiconductor and Storage 3SK260-GR is a silicon N-channel dual gate MOS field effect transistor (MOSFET). It's designed for high-frequency applications such as FM tuners, RF amplifiers, and mixers. The dual-gate configuration allows for improved gain control and reduced feedback capacitance, making it well-suited for sensitive receiver circuits.

Applications

  • FM tuners
  • RF amplifiers
  • Mixers
  • Oscillators
  • High-frequency signal processing circuits

Features

  • N-channel dual-gate MOSFET
  • High forward transfer admittance (Yfs)
  • Low feedback capacitance (Crss)
  • High input impedance
  • Low noise figure
  • Available in small signal package (e.g., SOT-23)

Benefits

  • Provides high gain amplification at high frequencies
  • Reduces signal distortion
  • Improves stability in RF circuits
  • Minimizes loading effects on signal sources
  • Enhances signal-to-noise ratio
  • Enables compact circuit designs

Additional Details

The specific characteristics of the 3SK260-GR, such as the drain current, gate voltage, and power dissipation, are detailed in the Toshiba Semiconductor and Storage datasheet. The dual-gate structure allows for independent control of the drain current, facilitating gain control and automatic gain control (AGC) functions. The low feedback capacitance minimizes the Miller effect, improving the stability and bandwidth of amplifier circuits. The high input impedance reduces loading on the signal source, preserving signal integrity. This transistor is typically used in the front-end stages of radio receivers and other high-frequency communication equipment. The GR suffix likely indicates a specific grade or selection of the device based on its performance characteristics.

Proper biasing and impedance matching are critical for achieving optimal performance from the 3SK260-GR in RF amplifier and mixer applications. The device is sensitive to static electricity, so proper handling precautions are necessary to prevent damage. The small package size allows for dense component placement on printed circuit boards. Consult the datasheet for detailed information on the device's electrical characteristics, thermal resistance, and safe operating area.

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