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Same model may have multiple batches, images only for reference.
2SK3667(Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SK3667(Q)

Part No 2SK3667(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET N-CH Si 600V 7.5A 3-Pin(3+Tab) TO-220SIS T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 160228-2SK3667(Q)
Popularity Low
Supply and Demand Status Limited
Family Name 2SK3667
Introduction Date April 15, 2003
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK3667(Q) CAD Model

Description

2SK3667(Q) N-Channel MOSFET

The 2SK3667(Q) is a high-performance N-Channel MOSFET designed for efficient power management applications. This MOSFET boasts a robust design, ensuring reliable operation under challenging conditions.

  • Features and Benefits:
    • Low on-resistance for reduced power loss
    • High-speed switching capabilities
    • Enhanced thermal stability
    • Compact package for space-saving designs
  • Applications:
    • Switching power supplies
    • Motor control circuits
    • DC-DC converters
    • Load switching

    Additional Details: The 2SK3667(Q) provides exceptional control in high-frequency applications, making it a preferred choice for designers seeking both performance and efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $19.8383 $59.5149
8+ $16.2786 $130.2288
11+ $15.7692 $173.4612
16+ $15.2610 $244.1760
20+ $14.7517 $295.0340
27+ $13.2259 $357.0993
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,600 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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