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2SK2398

Part No 2SK2398
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) / Trans MOSFET N-CH Si 60V 45A 3-Pin(3+Tab) TO-3PN
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Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 159446-2SK2398
Popularity Medium
Supply and Demand Status Balance
Family Name 2SK2398
Introduction Date January 01, 1998
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK2398 CAD Model

Description

The 2SK2398 is a versatile N-channel MOSFET tailored for applications demanding efficient power switching and regulation. With its exceptional design and performance, it is trusted in sophisticated electronic and power systems across industries.

Features and Benefits

  • Swift Switching Capability: The 2SK2398 offers rapid switching, which is essential for high-speed electronic applications.
  • Minimized On-Resistance: With an on-resistance of 0.35 Ohms, this MOSFET minimizes power dissipation to elevate efficiency.
  • Enhanced Thermal Management: Maintains stable performance even under high thermal stress, making it ideal for continuous operation.
  • Adaptable TO-220 Package: The package ensures easy integration and adaptation in various circuit designs.

Applications

  • Renewable Energy Systems
  • UPS Systems
  • Consumer Electronics
  • Electric Motor Drives
  • High-Performance Computing

The 2SK2398's robust characteristics make it a favorite among engineers who need reliable components to accomplish cutting-edge technological projects.

Additional Details

Through advanced engineering, the 2SK2398 incorporates efficient energy conversion and robust performance in power-dense environments. This MOSFET is an ideal choice for designers prioritizing system efficiency, performance reliability, and durability in modern electronic circuitry.

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