The Toshiba Semiconductor and Storage 2SC752(G)TM-O is a silicon NPN epitaxial planar transistor designed for low-noise amplifier applications in the VHF band. This transistor is characterized by its high gain and low noise figure, making it suitable for sensitive receiver circuits.

Applications:

• VHF low-noise amplifiers
• RF front-end amplifiers
• Communication receivers
• Oscillator circuits
• Mixer circuits

Features:

• NPN Epitaxial Planar Transistor: Utilizes a proven transistor technology for reliable performance.
• Low Noise Figure: Minimizes noise contribution in amplifier circuits.
• High Gain: Provides substantial amplification of weak signals.
• High Transition Frequency: Suitable for VHF band applications. (Specific transition frequency requires further specification from datasheets).
• Small Signal Amplifier: Designed for amplifying small signals with minimal distortion.
• TM Package: Compact package for easy integration.

Benefits:

• Improved Signal Reception: Enhances the sensitivity of receiver circuits.
• Reduced Noise: Minimizes unwanted noise for clearer signal reception.
• Increased Amplification: Provides strong amplification of weak signals.
• Reliable Performance: Designed for stable and consistent operation.
• Easy Integration: Compact package simplifies circuit design and assembly.

Additional Details:

The 2SC752(G)TM-O transistor is specifically designed for low-noise amplification in VHF applications. Key parameters include collector-emitter voltage, collector current, and power dissipation. The noise figure is a crucial specification for low-noise amplifier design. The (G) designation may indicate a specific gain range or other electrical characteristic. The TM package facilitates surface mount assembly.