The 2SC5066-Y is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in high-frequency amplification and oscillation applications.

Applications:

• High-frequency amplifiers
• Oscillators
• Mixers
• RF front-end circuits
• Communication equipment

Features:

• Low noise figure
• High gain
• High transition frequency (fT)
• Excellent linearity
• Small signal amplifier
• Epitaxial planar structure

Benefits:

• Improved signal amplification in high-frequency circuits
• Enhanced oscillator performance
• Reduced noise in sensitive receiver applications
• Increased signal fidelity
• Stable and reliable operation

Technical Specifications:

The 2SC5066-Y features a collector-emitter voltage (VCEO) of 20V, a collector current (IC) of 50mA, and a power dissipation (PC) of 200mW. The typical transition frequency (fT) is 6.5 GHz, and the noise figure (NF) is typically 1.5 dB. The 'Y' in the part number likely designates a specific hFE (DC current gain) rank. Please refer to the datasheet for precise hFE values for the 'Y' rank.

This transistor is typically supplied in a small surface mount package (SOT-23 or similar). Consult the device datasheet for pinout information and recommended soldering practices.