Applications

• Low noise amplifiers (LNA)
• VHF/UHF receivers
• Oscillators
• Mixers
• High-frequency applications

Features

• Low noise figure: The 2SC4116-GR(F) offers a low noise figure, making it suitable for sensitive receiver applications.
• High gain: Provides high gain amplification, improving signal strength.
• High transition frequency: This transistor features a high transition frequency (fT), enabling its use in high-frequency circuits.
• Small signal amplification: Specifically designed for small signal amplification, maintaining signal integrity.
• Epitaxial planar structure: Ensures high reliability and performance.

Benefits

• Improved receiver sensitivity: The low noise figure enhances the sensitivity of receivers, allowing for the detection of weak signals.
• Increased signal strength: High gain amplification boosts signal levels, improving overall system performance.
• Enhanced system performance: The high transition frequency enables the transistor to operate effectively in high-frequency applications, contributing to enhanced system performance.
• Stable operation: Designed for stable and reliable operation in demanding environments.
• Minimized signal distortion: Suitable for small signal amplification, ensuring minimal signal distortion.

Technical Specifications

The 2SC4116-GR(F) typically features a collector-emitter voltage (VCEO) of 20V, a collector current (IC) of 30mA, and a power dissipation (PC) of 200mW. Its noise figure (NF) is typically around 1.2dB at 200MHz. The transition frequency (fT) is typically around 6.5GHz. The 'GR' indicates its hFE (DC current gain) ranking within a certain range provided by Toshiba. This transistor comes in a small surface-mount package, facilitating compact designs.

This transistor is commonly used in various communication devices and instruments requiring low-noise, high-gain amplification at high frequencies. Its specific characteristics make it well-suited for enhancing the performance of RF front-end circuits.