The 2SC1627 is a silicon NPN epitaxial planar transistor produced by Toshiba Semiconductor and Storage. It is designed for use in various high-frequency power amplifier applications and oscillator circuits.

Applications:

• High-frequency power amplifiers
• Oscillator circuits
• VHF/UHF transmitters
• General-purpose amplification

Features:

• NPN Silicon Epitaxial Planar Transistor
• High Collector Power Dissipation
• High Transition Frequency (fT)
• Low Collector Output Capacitance

Benefits:

• Suitable for high-power amplification at high frequencies
• Provides efficient performance in oscillator circuits
• Enables the design of compact and efficient RF circuits
• Offers reliable performance in demanding applications

Additional Details:

The 2SC1627 features a collector-emitter voltage (VCEO) of 25V, a collector current (IC) of 1.5A, and a collector power dissipation (PC) of 8W. Its high transition frequency (fT) of 170 MHz allows it to be used in high-frequency applications. This transistor is housed in a TO-220 package, providing good thermal dissipation characteristics. The 2SC1627 is known for its robustness and reliability in RF circuits.