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2SA1243

Part No 2SA1243
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts (0 - 9)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1036526-2SA1243
Categories OEM Parts(0-9)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SA1243 CAD Model

Description

The 2SA1243 is a PNP silicon transistor manufactured by Toshiba Semiconductor and Storage. It is designed for high-frequency amplifier applications, particularly in VHF and UHF bands. Its key features include low noise figure and high gain, making it suitable for sensitive receiver front-ends and high-performance amplifiers.

Applications

  • VHF/UHF amplifiers
  • Low-noise amplifiers (LNAs)
  • Mixer circuits
  • Oscillators
  • RF front-ends

Features

  • PNP Silicon Transistor
  • Low noise figure (NF = 1.5 dB typical at 1 GHz)
  • High gain (S21e = 10 dB typical at 1 GHz)
  • High transition frequency (fT = 6 GHz)
  • Low feedback capacitance
  • Excellent linearity

Benefits

  • Provides high-sensitivity amplification for weak signals.
  • Minimizes noise interference in receiver circuits.
  • Ensures stable and reliable performance in high-frequency applications.
  • Offers superior signal amplification with minimal distortion.
  • Improves overall system performance in communication devices.

Additional Details

The 2SA1243 has a collector-emitter voltage (VCEO) rating of -12V and a collector current (IC) rating of -30 mA. It comes in a small surface-mount package (e.g., SOT-343) designed for high-frequency performance. The typical power gain at 1 GHz is 10 dB, and the noise figure is 1.5 dB. This transistor is commonly used in applications such as satellite receivers, wireless communication devices, and radar systems. Careful circuit design and impedance matching are essential to achieve optimal performance. Its operating junction temperature can range from -55°C to +150°C.

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