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2SA1162

Part No 2SA1162
Manufacturer Toshiba Semiconductor and Storage
Catalog Hard To Find
Description TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1124367-2SA1162
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA1162 CAD Model

Description

The 2SA1162 is a silicon PNP epitaxial planar transistor manufactured by Toshiba. It is designed for use in audio amplifier and general-purpose applications, known for its low noise and high gain characteristics. It offers reliable performance in various electronic circuits.

Applications

  • Audio Amplifiers: Used in the amplification stages of audio equipment, such as preamplifiers and power amplifiers.
  • Low-Noise Amplifiers: Suitable for applications requiring minimal noise amplification.
  • General-Purpose Amplification: Employed in various electronic circuits for general amplification purposes.
  • Driver Stages: Utilized to drive larger transistors or other high-current devices in electronic circuits.
  • Voltage Amplifiers: Suitable for voltage amplification in various electronic applications.

Features

  • Low Noise: Offers minimal noise amplification, ensuring clear audio signals.
  • High Gain: Provides significant amplification for weak input signals.
  • High Collector Current: Capable of handling a substantial amount of collector current.
  • Epitaxial Planar Structure: Ensures high performance and reliability.
  • PNP Transistor: A PNP transistor complementing NPN transistors in circuit designs.

Benefits

  • Enhanced Audio Quality: Improves audio signal amplification with minimal noise.
  • Increased Circuit Performance: Boosts the overall performance and reliability of electronic circuits.
  • Versatile Application: Suitable for a wide range of audio and general-purpose applications.
  • Reliable Operation: Ensures consistent and dependable performance in diverse operating conditions.
  • Improved Signal Clarity: Minimizes noise interference for clearer signal amplification.

Technical Specifications

The 2SA1162 features a collector-emitter voltage (VCEO) of -50V, a collector current (IC) of -150mA, and a power dissipation (PC) of 500mW. It exhibits low noise characteristics and high gain (hFE). The transistor is commonly available in a through-hole package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8,475+ $0.0059 $50.0025
18,185+ $0.0055 $100.0175
28,305+ $0.0053 $150.0165
40,820+ $0.0049 $200.0180
53,195+ $0.0047 $250.0165
65,220+ $0.0046 $300.0120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 93,600 pieces
MOQ: 8475 pcs
Order Increment : 1 pcs
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