The 2SA1013-0 is a PNP epitaxial silicon transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in audio frequency power amplifier applications and general-purpose switching circuits. This transistor is known for its high collector power dissipation and excellent linearity, making it a suitable choice for audio amplification.

Applications:

• Audio power amplifiers
• General-purpose switching circuits
• Driver stages in audio amplifiers
• Analog signal processing
• Voltage amplification

Features:

• High collector power dissipation
• Excellent linearity
• Low saturation voltage
• High DC current gain
• Complementary to NPN transistor 2SC2335

Benefits:

• High-quality audio amplification
• Efficient switching performance
• Reduced distortion in amplifier circuits
• Easy to use in complementary circuits
• Reliable performance in various applications

Specifications:

The 2SA1013-0 has a collector-emitter voltage (VCEO) of -50V, a collector current (IC) of -3A, and a collector power dissipation (PC) of 25W. Its DC current gain (hFE) typically ranges from 70 to 240. The transition frequency (fT) is typically 80 MHz. It is typically packaged in a TO-126 package. It operates within a temperature range of -55°C to +150°C. Its complementary NPN transistor is 2SC2335.

This transistor provides reliable and efficient performance in audio and switching applications. Its high power dissipation and excellent linearity make it an ideal choice for audio amplifier designs where high-quality sound reproduction is critical.