The 1SS416CT is a silicon epitaxial planar type switching diode manufactured by Toshiba Semiconductor and Storage. It is designed for high-speed switching applications, offering fast switching speeds and low forward voltage drop.

Applications:

• High-speed switching circuits
• Signal detection
• Mixer circuits
• Detector circuits
• Clamping circuits

Features

• Fast switching speed
• Low forward voltage
• Small surface mount package
• High reliability
• Pb-free (RoHS compliant)

Benefits

• Efficient performance in high-frequency applications
• Reduced power consumption
• Compact circuit design
• Enhanced system stability
• Environmentally friendly

Additional Details:

The 1SS416CT typically has a forward voltage of approximately 0.7V at a forward current of 10mA. The reverse recovery time is usually very short, in the range of a few nanoseconds, making it suitable for high-speed switching. The maximum repetitive peak reverse voltage is generally around 80V, and the maximum forward current is approximately 100mA. The diode is usually packaged in a small surface mount package such as a SOT-23 or similar, allowing for high-density circuit designs. Its operating temperature range is typically from -55°C to +125°C. Due to its fast switching speed and low forward voltage, it is well-suited for applications where minimizing switching losses is critical. It is widely used in various electronic devices, ensuring reliable performance in diverse conditions. The silicon epitaxial planar construction contributes to its high performance and reliability. This diode is designed to provide consistent and efficient operation in demanding electronic circuits. The 'CT' suffix likely indicates a specific packaging or taping option for automated assembly.