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LMG3410R070RWHT

Part No LMG3410R070RWHT
Manufacturer Texas Instruments
Catalog PMIC - Power Distribution Switches, Load Drivers
Description PWR MGMT MOSFET/PWR DRIVER / Power Switch/Driver 1:1 P-Channel 12A 32-VQFN (8x8)
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits (ICs) - Power Management (PMIC) - Power Distribution Switches, Load Drivers
Mfr Texas Instruments
Series -
Package Tape & Reel
Product Status Active
Switch Type Load Switch
Number of Outputs 1
Output Configuration High Side
Output Type P-Channel
Interface Logic, PWM
Voltage - Load 480V (Max)
Voltage - Supply (Vcc/Vdd) 9.5V ~ 18V
Current - Output (Max) 12A
Rds On (Typ) 70mOhm
Input Type Non-Inverting
Features Bootstrap Circuit, 5V Regulated Output
Fault Protection Over Current, Over Temperature, UVLO
Temperature Range - Operating -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 32-VQFN (8x8)
Package / Case 32-VQFN Exposed Pad
Base Product Number LMG3410R070
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 1357062-LMG3410R070RWHT
Ultra Librarian 3D Model Ultra Librarian LMG3410R070RWHT CAD Model

Description

Introducing the LMG3410R070RWHT from Texas Instruments

The LMG3410R070RWHT is a state-of-the-art power module designed by Texas Instruments, a leader in semiconductor solutions. This innovative product is a testament to Texas Instruments' commitment to providing high-performance and reliable components for advanced power electronics applications.

At the heart of the LMG3410R070RWHT lies a 600 V GaN FET with an integrated driver and protection features. This integration not only simplifies the design process but also enhances system performance through reduced parasitic inductance and increased system reliability. The GaN technology employed in this module offers superior switching speeds and efficiency compared to traditional silicon-based solutions, making it an ideal choice for high-frequency and high-efficiency applications.

The LMG3410R070RWHT boasts a robust set of features that cater to a wide range of applications, including but not limited to, power supplies, motor drives, and inverters for renewable energy systems. Its fast switching capabilities enable compact and lightweight power electronics designs, which are particularly beneficial in space-constrained applications.

Key specifications of the LMG3410R070RWHT include:

  • RDS(on) of 70 mOhm, ensuring low conduction losses.
  • Integrated overtemperature and overcurrent protection, enhancing system safety and longevity.
  • Zero reverse recovery charge (Qrr), minimizing switching losses and enabling high-efficiency operation.
  • A thermally enhanced 8x8 QFN package, providing excellent thermal performance and simplifying heat management.

Furthermore, the LMG3410R070RWHT is designed with ease of use in mind. It features a 5V VDD UVLO (Under Voltage Lock Out) for the gate driver, ensuring reliable operation even under fluctuating supply conditions. The module also provides a Kelvin source connection, which reduces gate ringing and improves switching performance.

For engineers and designers looking to leverage the benefits of GaN technology in their power systems, the LMG3410R070RWHT from Texas Instruments offers a compelling solution. Its combination of high performance, integration, and protection features make it a versatile and dependable choice for pushing the boundaries of power electronics design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $40.0447 $80.0894
4+ $32.8572 $131.4288
5+ $31.8304 $159.1520
7+ $30.8036 $215.6252
9+ $29.7768 $267.9912
12+ $26.6964 $320.3568
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 450 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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