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LM5113TMX/NOPB

Part No LM5113TMX/NOPB
Manufacturer Texas Instruments
Catalog PMIC - Gate Drivers
Description IC GATE DRVR HALF-BRIDGE 12USMD / Half-Bridge Gate Driver IC Non-Inverting 12-DSBGA
Sample
Rohs State rohs
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Category Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers
Mfr Texas Instruments
Package Tape & Reel
Product Status Not For New Designs
Programmable Not Verified
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 4.5V ~ 5.5V
Logic Voltage - VIL, VIH 1.76V, 1.89V
Current - Peak Output (Source, Sink) 1.2A, 5A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 107 V
Rise / Fall Time (Typ) 7ns, 1.5ns
Temperature Range - Operating -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Package / Case 12-WFBGA
Supplier Device Package 12-DSBGA
Base Product Number LM5113
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 877524-LM5113TMX/NOPB
Ultra Librarian 3D Model Ultra Librarian LM5113TMX/NOPB CAD Model

Description

Product Overview: LM5113TMX/NOPB by Texas Instruments

The LM5113TMX/NOPB is a highly efficient, feature-packed gate driver specifically designed to drive enhancement mode Gallium Nitride (GaN) power transistors. Manufactured by Texas Instruments, a leader in semiconductor technology, this gate driver is ideal for a variety of applications that demand high-speed switching and high power efficiency, such as power supplies, motor controllers, and renewable energy inverters.

Key Features

  • Optimized for GaN Transistors: The LM5113TMX/NOPB is tailored for driving GaN FETs, providing the necessary drive voltage required for these high-performance transistors.
  • Dual Outputs: It features dual outputs which can independently drive the GaN FET's high-side or low-side.
  • High-Speed Operation: With its capability to support high-frequency operation, the LM5113TMX/NOPB enables power supply designs with excellent power density.
  • Low Propagation Delay: The device boasts a low propagation delay, which is crucial for maintaining efficiency and reducing switching losses in power conversion systems.
  • Negative Voltage Handling: It can tolerate negative voltages on the switching node, a common occurrence in high-speed circuits, providing reliable operation under strenuous conditions.
  • Under-Voltage Lockout (UVLO): The UVLO feature ensures that the gate driver operates only when the supply voltage is within an acceptable range, protecting the GaN FETs from damage due to insufficient gate voltage.

Applications

The LM5113TMX/NOPB is versatile and can be used across various high-efficiency and high-density power conversion applications, including:

  • DC-DC converters
  • AC-DC power supplies
  • Motor drives and inverters
  • Class-D audio amplifiers
  • Solar inverters and renewable energy systems

Quality and Reliability

As with all Texas Instruments products, the LM5113TMX/NOPB is designed to meet high standards of quality and reliability. The "NOPB" designation indicates that the product is lead-free (No Lead), making it compliant with RoHS regulations and suitable for use in environmentally sensitive applications.

Whether you're designing for industrial, automotive, or consumer markets, the LM5113TMX/NOPB gate driver from Texas Instruments offers the performance and features necessary to drive the latest GaN technology effectively and efficiently.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.7582 $54.0656
19+ $5.5452 $105.3588
28+ $5.3720 $150.4160
39+ $5.1987 $202.7493
50+ $5.0254 $251.2700
67+ $4.5055 $301.8685
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Availability: 4,106 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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