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LM25101BSDX/NOPB

Part No LM25101BSDX/NOPB
Manufacturer Texas Instruments
Catalog PMIC - Gate Drivers
Description IC GATE DRVR HALF-BRIDGE 10WSON / Half-Bridge Gate Driver IC Non-Inverting 10-WSON (4x4)
Sample
Rohs State rohs
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Category Integrated Circuits (ICs)>Power Management (PMIC)>Gate Drivers
Manufacturer Texas Instruments
Packaging Reel - TR
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 9V ~ 14V
Logic Voltage - VIL, VIH 2.3V, -
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 100 V
Rise / Fall Time (Typ) 570ns, 430ns
Temperature Range - Operating -40°C ~ 125°C (TJ)
Mounting Surface Mount
Case / Package 10-WDFN Exposed Pad
Supplier Device Package 10-WSON (4x4)
Base Product Number LM25101
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Other Part Number 296-51240-1,296-51240-2,296-51240-6,LM25101BSDX/NOPB-ND
Standard Package 4,500
Win Source Part Number 1320029-LM25101BSDX/NOPB
Ultra Librarian 3D Model Ultra Librarian LM25101BSDX/NOPB CAD Model

Description

LM25101BSDX/NOPB - Texas Instruments

The LM25101BSDX/NOPB is a high-performance, dual N-Channel MOSFET gate driver designed by Texas Instruments to meet the stringent requirements of modern power supply designs. This versatile driver is capable of driving both high-side and low-side N-Channel MOSFETs, making it an ideal choice for synchronous buck or half-bridge topologies in power converters and motor controllers.

Boasting a wide supply voltage range from 5.5V to 14V, the LM25101BSDX/NOPB can effectively handle a diverse set of applications. Its robust design ensures reliable operation even under extreme conditions, with an extended industrial temperature range of -40°C to 125°C. The device is also available in a compact LLP-10 package, which is highly valued for space-constrained applications.

Key features of the LM25101BSDX/NOPB include its high peak output current of up to 2A, which allows for rapid charging and discharging of MOSFET gate capacitance, resulting in swift and efficient switching performance. Additionally, the device's adaptive dead-time control significantly reduces body diode conduction losses by automatically adjusting the turn-on of the synchronous MOSFET.

The LM25101BSDX/NOPB also incorporates under-voltage lockout (UVLO) for both the high-side and low-side drivers, ensuring that the MOSFETs are only operational when there is sufficient supply voltage. This feature enhances system reliability by preventing malfunction due to insufficient gate drive voltage. Moreover, the device's cross-conduction prevention logic minimizes the risk of shoot-through, further safeguarding your power circuitry.

For design flexibility, the LM25101BSDX/NOPB includes independent inputs for each driver, providing the option for either separate or common input signals. This allows for tailored gate drive schemes that can optimize the performance of your specific application. With its robust feature set and high reliability, the LM25101BSDX/NOPB is an excellent choice for engineers seeking a high-quality gate driver for their power management solutions.

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