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DRV5013ADEDBZR

Part No DRV5013ADEDBZR
Manufacturer Texas Instruments
Catalog Magnetic Sensors - Switches (Solid State)
Description PROTOTYPE / Digital Switch Latch Open Drain Hall Effect SOT-23-3
Sample
Rohs State rohs
ECAD Module
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Category Sensors, Transducers>Magnetic Sensors>Switches (Solid State)
Mfr Texas Instruments
Series -
Package Bulk
Function Latch
Technology Hall Effect
Polarization South Pole
Sensing Range 5mT Trip, -5mT Release
Test Condition -40°C ~ 125°C
Voltage - Supply 2.5V ~ 38V
Current - Supply (Max) 2.7mA
Current - Output (Max) 30mA
Output Type Open Drain
Features Temperature Compensated
Temperature Range - Operating -40°C ~ 125°C
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Standard Package 1 pcs
Win Source Part Number 1381920-DRV5013ADEDBZR
Ultra Librarian 3D Model Ultra Librarian DRV5013ADEDBZR CAD Model

Description

DRV5013ADEDBZR: Hall Effect Sensor from Texas Instruments

The DRV5013ADEDBZR is a digital latch Hall effect sensor designed and manufactured by Texas Instruments (TI), tailored for robust and reliable performance in a wide range of industrial and consumer applications. This magnetic sensor device offers a unique blend of features that make it an ideal choice for position sensing and motion detection tasks.

With its built-in latch functionality, the DRV5013A device holds its output state until a subsequent magnetic field of opposite polarity is detected, making it perfect for applications that require a sensor to remember its state without constant power consumption. This makes it an excellent choice for battery-powered and energy-sensitive systems.

The device operates from a supply voltage range of 2.7V to 38V, which allows for flexible integration into various circuit designs. The wide voltage range also ensures compatibility with both low-voltage and higher-voltage systems without the need for additional power regulation components.

Moreover, the DRV5013ADEDBZR is designed with a chopper-stabilized architecture that enhances the stability of the magnetic threshold, thus reducing the influence of temperature and supply voltage variations. This results in highly accurate and consistent performance across diverse operating conditions.

The sensor is packaged in a small, X2SON package with an ultra-thin body, measuring just 1.60mm x 1.60mm x 0.60mm. This compact form factor is highly advantageous for space-constrained applications, allowing designers to incorporate magnetic sensing capabilities into tight spaces without compromising on performance.

Additionally, the DRV5013ADEDBZR is characterized by its high ESD (Electrostatic Discharge) protection level, which safeguards the device against transient voltage spikes, thus enhancing its durability and reliability in harsh electrical environments.

TI's DRV5013A series comes with a temperature operating range of -40°C to 125°C, making it suitable for use in extreme environmental conditions. Whether it's being used in automotive applications, industrial equipment, consumer electronics, or any other system that requires precise and dependable magnetic sensing, the DRV5013ADEDBZR stands out as a solid choice for designers and engineers.

Overall, the DRV5013ADEDBZR Hall effect sensor from Texas Instruments offers a versatile and reliable solution for applications requiring digital latching detection of magnetic fields with high precision and stability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6774 $50.8050
180+ $0.5559 $100.0620
280+ $0.5385 $150.7800
385+ $0.5211 $200.6235
500+ $0.5038 $251.9000
665+ $0.4516 $300.3140
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 103,769 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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