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BQ4010MA-85

Part No BQ4010MA-85
Manufacturer Texas Instruments
Catalog Memory
Description IC NVSRAM 64KBIT PARALLEL 28DIP / NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 85 ns 28-DIP Module (18.42x37.72)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits (ICs) - Memory - Memory
Mfr Texas Instruments
Package Tube
Product Status Obsolete
Programmable Not Verified
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 64Kbit
Memory Organization 8K x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 85ns
Access Time 85 ns
Voltage - Supply 4.75V ~ 5.5V
Temperature Range - Operating 0°C ~ 70°C (TA)
Mounting Type Through Hole
Package / Case 28-DIP Module (0.61", 15.49mm)
Supplier Device Package 28-DIP Module (18.42x37.72)
Base Product Number BQ4010
Standard Package 14 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0041
Win Source Part Number 848035-BQ4010MA-85
Ultra Librarian 3D Model Ultra Librarian BQ4010MA-85 CAD Model

Description

The BQ4010MA-85 is a state-of-the-art non-volatile static RAM (NVSRAM) module designed and manufactured by Texas Instruments. This high-performance memory device combines a 32K x 8 static RAM with a self-contained lithium energy source and control circuitry which ensures reliable data retention for a minimum of 10 years in the absence of external power.

Key Features

  • Memory Size: The BQ4010MA-85 boasts a robust memory capacity of 32K x 8 bits, providing sufficient space for critical data storage.
  • Power Source: It includes an integrated lithium battery that ensures data retention during any power loss situations.
  • Access Time: With an access time of 85ns, it offers swift read and write operations, making it suitable for high-speed applications.
  • Automatic Power-Fail Chip De-Select and Write Protection: This feature writes protect the data when VCC is below the power-fail detect voltage, ensuring the integrity of the data during power fluctuations.
  • Long Data Retention: Guaranteed data retention for a minimum of 10 years without external power, thanks to its stable lithium energy source.
  • Directly TTL-Compatible Read and Write Operation: This ensures easy integration with a wide range of TTL circuits, without the need for additional components or complex interfacing.

Applications

The BQ4010MA-85 is designed for use in a variety of applications where reliable and persistent data storage is crucial. These applications often include industrial control systems, utility meters, medical devices, and other systems that require data to be preserved across power cycles. Its robust design also makes it suitable for use in harsh environments where traditional RAM might fail.

Quality and Reliability

Texas Instruments is known for its commitment to quality and reliability, and the BQ4010MA-85 is no exception. It is designed to meet the stringent requirements of industrial applications and is backed by TI's rigorous testing and validation processes. Customers can trust in the durability and performance of this NVSRAM module for their critical data storage needs.

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