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TSM2N60CP

Part No TSM2N60CP
Manufacturer Taiwan Semiconductor
Catalog HOT - SALES and EOL Components (T)
Description N CHANNEL POWER ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Taiwan Semiconductor
Win Source Part Number 382528-TSM2N60CP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TSM2N60CP CAD Model

Description

The TSM2N60CP is a 600V N-Channel MOSFET manufactured by Taiwan Semiconductor. It is designed for use in high-voltage, high-power applications, such as switched-mode power supplies (SMPS), power factor correction (PFC) circuits, and electronic lighting ballasts. This MOSFET offers a combination of high breakdown voltage, low on-resistance, and fast switching speed to provide efficient and reliable performance.

Applications

  • Switched-Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) Circuits
  • Electronic Lighting Ballasts
  • AC-DC Converters
  • High-Voltage Inverters

Features

  • 600V Drain-Source Voltage: Suitable for high-voltage applications.
  • Low RDS(on): Reduces conduction losses, improving efficiency.
  • N-Channel MOSFET: Simplifies circuit design.
  • Fast Switching Speed: Minimizes switching losses.
  • Avalanche Rated: Withstands voltage transients.
  • RoHS Compliant: Complies with environmental regulations.

Benefits

  • Improved Efficiency: Low RDS(on) minimizes power dissipation and increases overall system efficiency.
  • Enhanced Reliability: High breakdown voltage and avalanche rating ensure robust performance in demanding applications.
  • Simplified Design: N-Channel configuration simplifies gate drive circuitry.
  • Reduced Heat Dissipation: Lower RDS(on) leads to lower operating temperatures and improved thermal management.
  • Cost-Effective Solution: Provides a balance of performance and cost for high-voltage switching applications.

Additional Details

The TSM2N60CP is typically available in through-hole packages such as TO-220 or TO-220F, which allow for effective heat dissipation. It is designed to operate over a wide temperature range. The maximum drain current is dependent on the package and thermal conditions, typically in the range of a few amperes. The gate-source voltage is typically rated at +/- 30V. This MOSFET is a suitable choice for applications where both high voltage and high efficiency are critical design considerations. It is often used in hard-switching topologies due to its robust avalanche capability.

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