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SPN1024S56RG

Part No SPN1024S56RG
Manufacturer SYNC POWER Crop
Catalog Electronic Wholesale
Description Dual N-Channel Enhancement Mode MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer SYNC POWER Crop
Win Source Part Number 1257945-SPN1024S56RG
Manufacturer Homepage www.syncpower.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPN1024S56RG CAD Model

Description

The SPN1024S56RG is a power MOSFET from SYNC POWER Crop designed for efficient power switching in various applications.

Applications:

  • DC-DC Converters
  • Load Switching
  • Power Management
  • Synchronous Rectification
  • Motor Control
  • LED Lighting Drivers

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses and enhances efficiency.
  • Fast Switching Speed: Reduces switching losses and improves overall efficiency.
  • Low Gate Charge (Qg): Reduces the drive power requirements.
  • Avalanche Rated: Robust design to withstand transient voltage spikes.
  • RoHS Compliant: Compliant with Restriction of Hazardous Substances directive.
  • Surface Mount Package: Enables automated assembly and compact designs.

Benefits:

  • High Efficiency: Low RDS(on) and fast switching contribute to high efficiency in power conversion.
  • Reduced Heat Generation: Lower conduction and switching losses minimize heat dissipation.
  • Improved System Reliability: Avalanche rating enhances robustness against voltage transients.
  • Simplified Design: Compact surface mount package simplifies board layout and assembly.
  • Environmentally Friendly: RoHS compliance ensures adherence to environmental regulations.

Additional Details:

The SPN1024S56RG is typically supplied in a surface mount package optimized for thermal performance. The specific package outline, including dimensions and pin assignments, can be found in the manufacturer's datasheet. Key electrical parameters to consider during design include the drain-source voltage rating (VDS), gate-source voltage rating (VGS), continuous drain current (ID), pulsed drain current (IDM), and the thermal resistance (RθJA or RθJC). This MOSFET is suitable for power supply designs demanding high efficiency and compact size.

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