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VNS7NV04PTR-E

Part No VNS7NV04PTR-E
Manufacturer STMicroelectronics
Catalog PMIC - Power Distribution Switches, Load Drivers
Description IC MOSFET OMNIFET II 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits (ICs)
Manufacturer STMicroelectronics
Series OMNIFET II, VIPower
Packaging Reel - TR
Switch Type General
Number of Outputs 1
Output Configuration Low Side
Output Type N-Channel
Interface On/Off
Voltage - Load 36V (Maximum)
Current - Output (Maximum) 6A
Rds On (Typ) 65 mOhm (Maximum)
Fault Protection Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature Range -40°C ~ 150°C (TJ)
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SO
Manufacturer Homepage www.st.com
Win Source Part Number 712857-VNS7NV04PTR-E
Popularity Medium
Supply and Demand Status Limited
Family Name VNS7NV04P
Introduction Date October 15, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian VNS7NV04PTR-E CAD Model

Description

STMicroelectronics VNS7NV04PTR-E - Power MOSFET

The VNS7NV04PTR-E from STMicroelectronics is a highly efficient, surface-mount, Power MOSFET designed to deliver superior performance in a wide range of applications. This device is part of the OMNIFET II family and comes with built-in protection features, making it an ideal choice for demanding power management tasks.

The VNS7NV04PTR-E is an N-channel MOSFET that operates with a drain-source voltage (Vds) of 40V, and it can handle continuous drain currents up to 3.6A. Its low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, which makes it suitable for low voltage applications. The device is encapsulated in a compact SO-8 package, which is designed for efficient heat dissipation and space-saving on the PCB.

One of the standout features of the VNS7NV04PTR-E is its integrated protection against overcurrent, which is achieved through a current-limiting function. Additionally, the device includes thermal shutdown protection, which safeguards it from overheating and potential thermal runaway. These features enhance the reliability and longevity of both the MOSFET and the overall system it is part of.

The VNS7NV04PTR-E is characterized by low on-resistance (Rds(on)), which translates to lower conduction losses and improved power efficiency. This is particularly beneficial in applications such as automotive systems, DC-DC converters, power management circuits, and other high-efficiency power supplies. Moreover, the fast switching speed of this MOSFET makes it suitable for high-frequency operations.

STMicroelectronics has designed this MOSFET with the industry's standards in mind, ensuring compatibility with a wide range of control ICs and easy integration into existing designs. The VNS7NV04PTR-E represents a reliable and cost-effective solution for designers looking to optimize their power management systems with a robust and versatile component.

Key Features:

  • N-channel 40V, 3.6A Power MOSFET
  • Low threshold voltage
  • Current-limiting and thermal shutdown protection
  • Low on-resistance (Rds(on))
  • Fast switching performance
  • SO-8 package for efficient thermal management

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Quantity Unit Price Ext. Price
22+ $2.3230 $51.1060
53+ $1.9061 $101.0233
82+ $1.8465 $151.4130
112+ $1.7870 $200.1440
145+ $1.7274 $250.4730
194+ $1.5487 $300.4478
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