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VNS1NV04PTR-E

Part No VNS1NV04PTR-E
Manufacturer STMicroelectronics
Catalog PMIC - Power Distribution Switches, Load Drivers
Description OMNIFET II fully autoprotected Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits (ICs)
Manufacturer STMicroelectronics
Series OMNIFET II, VIPower
Packaging Reel - TR
Switch Type General
Number of Outputs 1
Output Configuration Low Side
Output Type N-Channel
Interface On/Off
Voltage - Load 36V (Maximum)
Current - Output (Maximum) 1.7A
Rds On (Typ) 250 mOhm (Maximum)
Fault Protection Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature Range -40°C ~ 150°C (TJ)
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SO
Win Source Part Number 1279666-VNS1NV04PTR-E
Manufacturer Homepage www.st.com
Family Name VNS1NV04P
Introduction Date May 16, 2009
ECCN EAR99
Country of Origin China
Estimated EOL Date 2027
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian VNS1NV04PTR-E CAD Model

Description

Introducing the VNS1NV04PTR-E from STMicroelectronics

The VNS1NV04PTR-E is a cutting-edge Power MOSFET developed by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This device is part of the OMNIFET II family, which is characterized by its fully autoprotected Power MOSFETs. It is designed to deliver high-performance power switching with exceptional efficiency, making it an ideal choice for a wide range of applications.

Key Features

  • Low On-resistance: The VNS1NV04PTR-E boasts an extremely low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • Thermal Shutdown: The device includes an integrated thermal shutdown feature, which protects the MOSFET from overheating by automatically turning it off when the junction temperature exceeds the threshold limit.
  • Current Limiting: A built-in current limiting function helps prevent damage to the MOSFET by restricting the current to a safe level during abnormal operating conditions.
  • ESD Protection: Electrostatic Discharge (ESD) protection is included to safeguard the device from sudden voltage spikes that can occur during handling or operation.
  • Logic-Level Gate Drive: The VNS1NV04PTR-E can be driven directly from low-power logic circuits, thanks to its logic-level gate drive capability, simplifying the design of control interfaces.

Applications

This versatile Power MOSFET is well-suited for a variety of applications, including:

  • Automotive systems
  • DC motor control
  • Power management tasks
  • LED lighting solutions
  • Relay and solenoid driving

The VNS1NV04PTR-E is presented in a surface-mount package, which makes it suitable for high-density PCB designs. It offers a drain-source voltage of 40V and a continuous drain current of 2.5A, making it robust enough for demanding environments. The device is also compliant with the RoHS directive, ensuring an environmentally friendly product.

Whether you're developing automotive electronics, designing power-efficient motor controls, or implementing advanced lighting systems, the VNS1NV04PTR-E from STMicroelectronics provides the reliability and performance needed to drive your innovation forward.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7705 $53.1150
70+ $1.4527 $101.6890
110+ $1.4073 $154.8030
150+ $1.3619 $204.2850
190+ $1.3165 $250.1350
255+ $1.1804 $301.0020
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,480 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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