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STW88N65M5

Part No STW88N65M5
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Trans MOSFET N-CH Si 650V 84A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 650V 84A TO-247
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
Standard Package 30
Category Discrete Semiconductor Products
Family FETs - Single
Series MDmesh V
Packaging Tube
FET Type MOSFET N-Channel Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 84A (Tc)
Rds On (Max) @ Id Vgs 29 mOhm @ 42A 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 204nC @ 10V
Input Capacitance (Ciss) @ Vds 8825pF @ 100V
Power - Max 450W
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Device Package TO-247-3
Catalog N-Channel Standard FETs
Related Products 497-15154-5 - DIODE SCHOTTKY 650V 10A TO220AB
Win Source Part Number 085868-STW88N65M5
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STW88N65M5
Introduction Date November 23, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2031
Ultra Librarian 3D Model Ultra Librarian STW88N65M5 CAD Model

Description

STW88N65M5 - Power MOSFET by STMicroelectronics

The STW88N65M5 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor technology. This device is part of the MDmesh™ M5 series, which utilizes innovative advancements in semiconductor material engineering to provide energy-efficient power management solutions for a wide range of applications.

Featuring state-of-the-art technology, the STW88N65M5 is designed with a focus on achieving extremely low on-resistance (RDS(on)) combined with a high threshold voltage (Vth), making it an ideal choice for applications that require efficient power conversion and high switching frequencies. Its RDS(on) is among the lowest in the industry, ensuring minimal power loss during operation and thus enhancing the overall efficiency of the systems it is integrated into.

The STW88N65M5 is capable of supporting a maximum drain-source voltage (VDSS) of up to 650V, making it suitable for high voltage applications. Its robust design also allows for a continuous drain current (ID) of up to 59A at 25°C, ensuring that it can handle significant power without performance degradation. The device's maximum junction temperature is rated at 150°C, providing a wide operating temperature range for various environmental conditions.

Thanks to its enhanced avalanche ruggedness and gate charge characteristics, the STW88N65M5 is highly reliable and offers improved power cycling performance. This makes it an excellent choice for applications such as solar inverters, welding equipment, switched-mode power supplies, and high-performance motor drives.

The MOSFET comes in a through-hole TO-247 package, which is widely used in the industry and known for its ease of mounting and excellent thermal performance. The package is designed to handle high heat dissipation, ensuring that the MOSFET operates within safe temperature limits even under high power conditions.

In summary, the STW88N65M5 Power MOSFET from STMicroelectronics represents a blend of efficiency, reliability, and performance, making it an excellent component for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.3433 $53.3732
10+ $10.9483 $109.4830
15+ $10.6062 $159.0930
20+ $10.2641 $205.2820
26+ $9.9219 $257.9694
34+ $8.8955 $302.4470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,950 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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