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STW56N65M2-4

Part No STW56N65M2-4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Extremely low gate charge
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh M2
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 93nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3900pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 358W (Tc)
Rds On (Maximum) @ Id, Vgs 62 mOhm @ 24.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247-4L
Package TO-247-4
Win Source Part Number 1262379-STW56N65M2-4
Manufacturer Homepage www.st.com
Family Name STW56N65M2-4
Introduction Date December 15, 2014
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2033
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STW56N65M2-4 CAD Model

Description

STW56N65M2-4 - STMicroelectronics

The STW56N65M2-4 is a high-performance N-channel 650V MDmesh™ M2 Power MOSFET designed and manufactured by STMicroelectronics. This device is built on an innovative proprietary vertical process technology, which is specifically engineered for high-voltage applications. The MOSFET is part of ST's MDmesh series, which is renowned for its excellent energy efficiency and thermal performance.

Key Features

  • High Voltage Rating: The device is rated for a drain-source voltage (VDS) of 650V, making it suitable for a wide range of high-voltage power applications.
  • Low On-Resistance: It features a low on-state resistance (RDS(on)), which minimizes conduction losses and enhances overall efficiency.
  • High Current Capability: With a continuous drain current (ID) capacity, this MOSFET can handle high current loads, ensuring robust performance in demanding conditions.
  • Low Gate Charge: A low gate charge (Qg) reduces switching losses, contributing to the device's high efficiency during operation.
  • Fast Switching: The fast switching speed of the STW56N65M2-4 helps in reducing switching losses and improving the performance of power conversion systems.

Applications

The STW56N65M2-4 is designed for a variety of applications, including:

  • Solar inverters
  • Switched mode power supplies (SMPS)
  • High-efficiency DC-DC converters
  • LED lighting solutions
  • Welding equipment
  • Uninterruptible power supplies (UPS)

Advanced Technology

STMicroelectronics' MDmesh technology combines a unique vertical structure with a proprietary diffusion process, resulting in a MOSFET with extremely low on-resistance and high dv/dt capability. This technology enables the STW56N65M2-4 to achieve high efficiency and reliability, which is critical for modern electronic systems where energy conservation is paramount.

Package and Quality

The STW56N65M2-4 is offered in a TO-247 package, which is known for its high power dissipation and mechanical robustness. This package is widely used in high-power applications due to its ability to handle large currents and high temperatures. STMicroelectronics ensures that this product meets stringent quality standards, providing designers with a reliable component for their high-voltage power solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.8635 $62.0445
16+ $7.2719 $116.3504
25+ $7.0455 $176.1375
34+ $6.8180 $231.8120
44+ $6.5904 $289.9776
59+ $5.9090 $348.6310
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,400 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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