STW160N75F3 - N-channel 75V - 0.0065 Ohm - 160A TO-247 Power MOSFET

The STW160N75F3 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is a part of ST's STripFET F3 series, which is renowned for its low on-resistance and high switching performance. The STW160N75F3 is designed to handle high current and voltage levels, making it an ideal choice for a wide range of power applications.

This robust component features a maximum drain-source voltage (V<sub>DS) of 75 volts, which allows it to efficiently manage high voltage operations. The device boasts an impressively low on-resistance of just 0.0065 ohms, which minimizes conduction losses and enhances overall efficiency. With a continuous drain current (I<sub>D) of 160 amperes, it can support heavy current loads, making it well-suited for high-power applications.

The STW160N75F3 comes in a TO-247 package, which is known for its ability to provide excellent thermal performance and mechanical ruggedness. The package's design ensures that the MOSFET can handle high thermal and electrical stress, thus ensuring reliability even under harsh operating conditions.

Key features of the STW160N75F3 include:

• Ultra-low gate charge (Q<sub>g) which facilitates faster switching
• 100% avalanche tested, guaranteeing robustness and reliability
• Low threshold drive, making it suitable for a variety of applications
• High dv/dt capability, ensuring suitability for fast-switching applications

Applications for the STW160N75F3 are diverse and include high-efficiency converters, power supplies, motor control systems, automotive applications, and more. Its ability to deliver high performance with low power dissipation makes it a preferred choice for designers looking to optimize power management in their systems.

STMicroelectronics provides comprehensive technical support and documentation for the STW160N75F3, including datasheets, application notes, and design resources, to assist engineers in integrating this power MOSFET into their designs with confidence and ease.