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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.7V @ 8A
Speed(Frequency) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 100μA @ 600V
Capacitance @ Vr, F 450pF @ 0V, 1MHz
Mounting Through Hole
Case / Package TO-220AC
Operating Temperature - Junction -40°C to 175°C
Win Source Part Number 086891-STPSC806D
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STPSC806D CAD Model

Description

STPSC806D - Silicon Carbide Power Schottky Diode

The STPSC806D is a robust and high-performance Silicon Carbide Power Schottky Diode developed by STMicroelectronics. This diode is designed to offer superior switching performance and increased reliability compared to traditional silicon-based diodes. With its cutting-edge Silicon Carbide (SiC) technology, the STPSC806D provides a perfect solution for high-efficiency power conversion in a wide range of applications including solar inverters, power supplies, and electric vehicles.

One of the key advantages of the STPSC806D is its extremely low forward voltage drop, which significantly reduces power losses during operation. This characteristic, combined with its ability to operate at high junction temperatures, ensures optimal performance in even the most demanding conditions. The diode's high surge current capabilities make it an excellent choice for applications that require robustness against transient conditions.

The STPSC806D has a repetitive peak reverse voltage (V<sub>RRM) of 600V and an average forward current (I<sub>F(AV)) of 8A, making it suitable for a variety of power applications. Its package is designed to maximize heat dissipation and ensure a low thermal resistance, further contributing to its high reliability and longevity.

With its zero reverse recovery charge (Q<sub>rr), the STPSC806D minimizes switching losses and enhances the efficiency of power converters. This feature, along with its low capacitance, allows for faster switching speeds, which is crucial for high-frequency applications.

STMicroelectronics has ensured that the STPSC806D meets the stringent requirements of industrial standards, thereby guaranteeing a high-quality component that engineers can rely on for their power conversion solutions. Its compact TO-220AC package also allows for easy integration into a wide range of circuit designs.

In summary, the STPSC806D from STMicroelectronics is a state-of-the-art Silicon Carbide Power Schottky Diode that offers exceptional performance characteristics. It stands out for its efficiency, thermal management, and reliability, making it an ideal choice for designers looking to enhance the performance of their power electronic systems.

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