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STP9NM40N

Part No STP9NM40N
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages | MOSFET N-CH 400V 5.6A TO220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 400V
Id - Continuous Drain Current 5.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 790mOhm at 2.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 365pF at 50V
Power Dissipation (Maximum) 60W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261812-STP9NM40N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP9NM40N CAD Model

Description

STP9NM40N - STMicroelectronics N-Channel MOSFET

The STP9NM40N is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leading semiconductor manufacturer known for its innovative and reliable products. This MOSFET is part of STMicroelectronics' MDmesh™ series, which is recognized for its excellent energy efficiency and thermal performance.

Key Features

  • High Voltage Capability: The STP9NM40N is designed to handle high voltages, with a drain-source voltage (VDS) of 400V, making it suitable for a wide range of applications, including power supply units and lighting systems.
  • Low On-Resistance: This component features a low on-state resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency.
  • High Current Rating: It has a continuous drain current (ID) of 7.3A, allowing it to drive high current loads with ease.
  • Fast Switching Speed: The fast switching capability of the STP9NM40N minimizes switching losses and enhances performance in high-frequency applications.
  • Enhanced Body Diode: The device features an improved body diode with low reverse recovery time (trr) and reduced reverse recovery charge (Qrr), which is beneficial in applications where diode performance is critical.
  • TO-220 Package: Housed in a TO-220 package, the STP9NM40N is easy to mount and provides excellent heat dissipation characteristics.

Applications

The versatility of the STP9NM40N allows it to be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Solutions
  • High-Efficiency DC/DC Converters
  • Motor Control Circuits
  • Power Management Systems

Conclusion

Overall, the STP9NM40N is a robust and efficient solution for designers looking to improve power management in their electronic designs. Its combination of high voltage capability, low on-resistance, and fast switching speed makes it a top choice for power conversion and regulation tasks. With STMicroelectronics' reputation for quality and reliability, the STP9NM40N is a MOSFET that engineers can trust for their critical applications.

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