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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 35A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 78mOhm at 19.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 91nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 3375pF at 100V
Power Dissipation (Maximum) 210W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261738-STP45N65M5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP45N65M5 CAD Model

Description

STP45N65M5 - N-channel 650 V, 45 mΩ typ., 34 A MDmesh™ M5 Power MOSFET

The STP45N65M5 is a state-of-the-art N-channel Power MOSFET from STMicroelectronics, designed with the innovative MDmesh™ M5 technology. It is engineered to meet the stringent requirements of high efficiency and reliability for power conversion applications. With a voltage rating of 650 V, it is particularly suitable for high-performance solutions where power density and energy efficiency are critical.

Key Features:

  • Low On-Resistance: The STP45N65M5 boasts a typical on-resistance (R<sub>DS(on)) of only 45 mΩ, which significantly reduces conduction losses and enhances the overall efficiency of the system.
  • High Current Capability: This Power MOSFET can handle a continuous current of 34 A, making it an excellent choice for applications demanding high current handling with minimal losses.
  • MDmesh™ M5 Technology: The device leverages the fifth generation of STMicroelectronics' proprietary super-junction technology, which optimizes the balance between on-state resistance and switching performance, ensuring outstanding efficiency at high switching frequencies.
  • Enhanced Switching Performance: The STP45N65M5 is designed to provide fast and reliable switching performance, which is essential for reducing switching losses in power electronic systems.
  • High Voltage Rating: With a breakdown voltage of 650 V, this MOSFET is well-suited for high voltage applications, offering a robust and secure operation even under stressful conditions.

Applications:

The STP45N65M5 is ideal for a wide range of applications, including but not limited to:

  • Switching power supplies (SMPS)
  • Lighting applications (LED drivers, HID lamps, etc.)
  • Welding equipment
  • Solar inverters
  • UPS systems
  • Power factor correction circuits

With its robust design and superior electrical characteristics, the STP45N65M5 from STMicroelectronics is a perfect choice for designers looking to improve the performance and reliability of their power conversion systems. Its combination of high voltage capability, low on-resistance, and high current handling enables the creation of compact, energy-efficient power solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $17.7273 $53.1819
7+ $14.5455 $101.8185
11+ $14.0910 $155.0010
15+ $13.6364 $204.5460
19+ $13.1819 $250.4561
26+ $11.8182 $307.2732
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 2,347 pieces
MOQ: 3 pcs
Order Increment : 1 pieza
*Need More Quantity? *Request a Bulk Quantity Quotation?

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