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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series FDmesh II
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 100nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2800pF @ 50V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 190W (Tc)
Rds On (Maximum) @ Id, Vgs 130 mOhm @ 12.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1261717-STP30NM60ND
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STP30NM60ND
Introduction Date November 06, 2007
ECCN EAR99
Country of Origin China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian STP30NM60ND CAD Model

Description

The STP30NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in the semiconductor industry. This device is designed to meet the demanding requirements of power electronic converters, offering a combination of low on-resistance and high switching speed, making it suitable for a variety of applications including switch-mode power supplies, motor control, and power management systems.

Key Features

  • Advanced Technology: The STP30NM60ND is built on STMicroelectronics' advanced MDmesh™ technology, which combines low on-resistance with high switching speed and is optimized for high voltage applications.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 600V, this MOSFET can handle high voltage applications, providing reliable performance in a variety of power conversion systems.
  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency, especially important for energy-sensitive applications.
  • High Current Rating: The STP30NM60ND can support a continuous drain current (I<sub>D) of up to 30A, making it capable of handling high current loads with ease.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) ensures faster switching performance, which is crucial for reducing switching losses in high-speed applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness against unexpected voltage spikes.

Applications

The versatile characteristics of the STP30NM60ND make it an excellent choice for a wide range of applications. It is particularly well-suited for:

  • Switch-mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)
  • High-efficiency DC-DC converters
  • Power factor correction (PFC) circuits
  • LED lighting applications
  • Motor control circuits

Conclusion

In summary, the STP30NM60ND from STMicroelectronics is a robust and efficient solution for high voltage power conversion applications. Its combination of cutting-edge technology, high voltage and current capabilities, and low on-resistance ensures that it meets the stringent requirements of modern electronic systems, delivering both performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $9.3139 $65.1973
17+ $7.6425 $129.9225
27+ $7.4033 $199.8891
37+ $7.1640 $265.0680
47+ $6.9260 $325.5220
63+ $6.2093 $391.1859
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 9,700 pieces
MOQ: 7 pcs
Order Increment : 1 piece
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