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STP20N95K5

Part No STP20N95K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel 950 V, 0.275 Ω, 17.5 A SuperMESH 5™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series SuperMESH5
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 950V
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1500pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 250W (Tc)
Rds On (Maximum) @ Id, Vgs 330 mOhm @ 9A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220-3
Package TO-220-3
Win Source Part Number 1261694-STP20N95K5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STP20N95K5
Introduction Date November 25, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian STP20N95K5 CAD Model

Description

Introducing the STP20N95K5 Power MOSFET from STMicroelectronics

The STP20N95K5 is a high-performance, N-channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This state-of-the-art component is a part of STMicroelectronics' MDmesh™ K5 series, which is known for its exceptional efficiency and thermal performance.

With a drain-source voltage (VDS) of 950V, the STP20N95K5 is engineered to handle high voltage applications with ease. It features a low on-resistance (RDS(on)) of 0.32 ohms, which significantly reduces power losses, making it an excellent choice for energy-sensitive designs. The device is capable of a continuous drain current (ID) of 17A, ensuring reliable performance in high-power scenarios.

The STP20N95K5 Power MOSFET utilizes STMicroelectronics' innovative MDmesh™ technology, which combines a vertical structure with a proprietary strip layout. This unique design allows for lower on-resistance and reduced gate charge (Qg), leading to higher efficiency and faster switching speeds. These characteristics make the MOSFET well-suited for a variety of applications, including switch-mode power supplies, lighting, solar inverters, and industrial automation systems.

This component also boasts a 100% avalanche tested design, which guarantees robustness and reliability under harsh operating conditions. The STP20N95K5 also features Zener-protected gate, providing an extra layer of protection against overvoltage transients, thus enhancing the overall durability of the device.

For ease of integration into various circuit designs, the STP20N95K5 is available in a TO-220 package, which is widely used and recognized in the industry for its excellent thermal properties. The package is designed to offer optimal heat dissipation, further improving the device's performance and longevity.

In summary, the STP20N95K5 from STMicroelectronics is a high-voltage, high-efficiency Power MOSFET that is perfect for designers looking to optimize their power management solutions. With its advanced MDmesh™ K5 technology, robust construction, and industry-standard packaging, this MOSFET is a top choice for applications demanding high performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.6041 $61.6451
26+ $4.5983 $119.5558
39+ $4.4546 $173.7294
54+ $4.3109 $232.7886
70+ $4.1672 $291.7040
93+ $3.7361 $347.4573
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Availability: 7,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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