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STP11NM60N

Part No STP11NM60N
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET | MOSFET N-CH 600V 10A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 450mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 31nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 850pF at 50V
Power Dissipation (Maximum) 90W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261662-STP11NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP11NM60N CAD Model

Description

STP11NM60N - Power MOSFET by STMicroelectronics

The STP11NM60N is a high-performance N-channel Power MOSFET designed and manufactured by the industry-leading semiconductor company, STMicroelectronics. This Power MOSFET utilizes the latest advancements in silicon technology to offer superior switching performance and high avalanche ruggedness, making it an ideal solution for a wide range of power applications.

Key Features

  • High Voltage Capability: The STP11NM60N can handle continuous drain currents up to 11A with a drain-source voltage of 600V, making it suitable for high voltage applications.
  • Low On-Resistance: With an on-resistance of only 0.52 ohms, this MOSFET ensures minimal power loss and improved efficiency in power conversion systems.
  • Fast Switching Speed: The device is designed for fast switching, reducing switching losses and enabling efficient operation at high frequencies.
  • Improved Gate Charge: The STP11NM60N features an optimized gate charge that allows for a simplified drive circuit, reducing overall system complexity and cost.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliable operation even under extreme conditions.
  • Zener-Protected: The built-in gate-source Zener diodes provide protection against gate-oxide stress and ensure a robust design.

Applications

The STP11NM60N is designed for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High Efficiency DC-DC Converters
  • Motor Control Systems
  • Power Factor Correction Circuits
  • Lighting Applications
  • Electronic Ballasts for Fluorescent Lighting

Quality and Reliability

STMicroelectronics is committed to providing products that meet the highest standards of quality and reliability. The STP11NM60N is no exception, benefiting from ST's rigorous testing and quality control processes. This ensures that customers receive a product that not only meets but exceeds industry standards for performance and longevity.

For more detailed information, including datasheets, technical documentation, and support, customers are encouraged to visit the official STMicroelectronics website or contact their local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.7115 $60.4775
200+ $0.5833 $116.6600
310+ $0.5660 $175.4600
425+ $0.5475 $232.6875
550+ $0.5290 $290.9500
730+ $0.4747 $346.5310
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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