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STL16N65M2

Part No STL16N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Switching applications
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh M2
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 19.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 718pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 56W (Tc)
Rds On (Maximum) @ Id, Vgs 395 mOhm @ 3.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerFlat (5x6)
Package 8-PowerVDFN
Win Source Part Number 1261313-STL16N65M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STL16N65M2
Introduction Date October 31, 2014
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2032
Ultra Librarian 3D Model Ultra Librarian STL16N65M2 CAD Model

Description

STL16N65M2 - N-channel 650 V, 0.16 Ohm typ., 15 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 5x6 package by STMicroelectronics

The STL16N65M2 is a high-performance, N-channel Power MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. As part of the MDmesh™ M2 series, this MOSFET is designed using an innovative proprietary vertical process technology, which is optimized for high switching frequencies and reduced on-resistance.

With a drain-source voltage (V<sub>DS) of 650 V, the STL16N65M2 is well-suited for a variety of applications that require efficient power conversion, including switched-mode power supplies (SMPS), lighting applications, welding equipment, and solar inverters. Its low on-resistance of just 0.16 Ohms typ. ensures high efficiency, minimizing energy loss and heat generation during operation.

The device boasts a continuous drain current (I<sub>D) of 15 A, making it capable of handling significant power without performance degradation. The STL16N65M2 also features a fast recovery diode, which is essential for high-efficiency switching and reduced switching losses. This characteristic makes it an ideal choice for high-frequency power switching applications.

Encased in a compact PowerFLAT™ 5x6 package, the STL16N65M2 offers a space-saving solution without compromising on power capacity or thermal performance. The package design enhances thermal resistance and mechanical durability, allowing for reliable operation even under harsh conditions.

STMicroelectronics has equipped the STL16N65M2 with Zener-protected gate, providing intrinsic robustness against gate oxide stress and ensuring a longer lifespan for your electronic designs. This feature, along with the device's 100% avalanche tested guarantee, provides designers with the confidence to incorporate this MOSFET into their high-reliability applications.

Overall, the STL16N65M2 from STMicroelectronics represents a superior choice for designers seeking a power MOSFET that delivers high efficiency, ruggedness, and reliability. Whether you are designing cutting-edge power supplies or innovative renewable energy solutions, the STL16N65M2 offers the performance and features to meet your needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7593 $61.5755
85+ $1.4437 $122.7145
125+ $1.3985 $174.8125
175+ $1.3534 $236.8450
225+ $1.3083 $294.3675
300+ $1.1729 $351.8700
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Availability: 1,000 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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