STI45N10F7 - N-channel 100 V, 0.0045 Ω, 80 A STripFET™ F7 Power MOSFET

The STI45N10F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, which is a part of their advanced STripFET F7 series. This MOSFET is designed to deliver high efficiency and reliability for a wide range of applications including switch-mode power supplies, motor control, and power management systems.

With a drain-source voltage of 100 V and a low on-resistance of just 0.0045 Ω, the STI45N10F7 is capable of handling continuous currents up to 80 A. This combination of features makes it an excellent choice for high-power and high-efficiency requirements. The MOSFET's low on-resistance is achieved through STMicroelectronics' advanced STripFET F7 technology, which minimizes conduction losses and improves overall performance.

The device is housed in a TO-220 package, which is widely used in the industry and known for its robustness and good thermal performance. The TO-220 package allows for efficient heat dissipation, ensuring the MOSFET operates within its temperature specifications even under high current conditions.

Key features of the STI45N10F7 include:

• 100 V drain-source voltage (V_DS)
• 80 A continuous drain current (I_D)
• 0.0045 Ω typical on-resistance (R_DS(on))
• Low gate charge and low input capacitance
• Fast switching performance
• 100% avalanche tested
• Enhanced threshold voltage and high immunity against gate bounce

Applications that can benefit from the use of the STI45N10F7 include:

• Synchronous rectification for switch-mode power supplies
• High-efficiency DC-DC converters
• Motor control applications
• Power management solutions

Overall, the STI45N10F7 is a versatile and reliable component that offers superior performance for engineers looking to optimize their power designs. With its industry-leading efficiency and thermal performance, this MOSFET from STMicroelectronics stands out as a top choice for demanding power applications.