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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series DeepGATE, STripFET VII
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1640pF @ 50V
Vgs (Maximum) 20V
Power Dissipation (Maximum) 60W (Tc)
Rds On (Maximum) @ Id, Vgs 18 mOhm @ 22.5A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK (TO-262)
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1261099-STI45N10F7
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STI45N10F7
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STI45N10F7 CAD Model

Description

STI45N10F7 - N-channel 100 V, 0.0045 Ω, 80 A STripFET™ F7 Power MOSFET

The STI45N10F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, which is a part of their advanced STripFET F7 series. This MOSFET is designed to deliver high efficiency and reliability for a wide range of applications including switch-mode power supplies, motor control, and power management systems.

With a drain-source voltage of 100 V and a low on-resistance of just 0.0045 Ω, the STI45N10F7 is capable of handling continuous currents up to 80 A. This combination of features makes it an excellent choice for high-power and high-efficiency requirements. The MOSFET's low on-resistance is achieved through STMicroelectronics' advanced STripFET F7 technology, which minimizes conduction losses and improves overall performance.

The device is housed in a TO-220 package, which is widely used in the industry and known for its robustness and good thermal performance. The TO-220 package allows for efficient heat dissipation, ensuring the MOSFET operates within its temperature specifications even under high current conditions.

Key features of the STI45N10F7 include:

  • 100 V drain-source voltage (V<sub>DS)
  • 80 A continuous drain current (I<sub>D)
  • 0.0045 Ω typical on-resistance (R<sub>DS(on))
  • Low gate charge and low input capacitance
  • Fast switching performance
  • 100% avalanche tested
  • Enhanced threshold voltage and high immunity against gate bounce

Applications that can benefit from the use of the STI45N10F7 include:

  • Synchronous rectification for switch-mode power supplies
  • High-efficiency DC-DC converters
  • Motor control applications
  • Power management solutions

Overall, the STI45N10F7 is a versatile and reliable component that offers superior performance for engineers looking to optimize their power designs. With its industry-leading efficiency and thermal performance, this MOSFET from STMicroelectronics stands out as a top choice for demanding power applications.

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