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STGWA80H65DFB

Part No STGWA80H65DFB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT BIPO 650V 80A TO247-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features IGBT Trench Field Stop 650 V 120 A 469 W Through Hole TO-247 Long Leads
Manufacturer STMicroelectronics
Package Tube
Part Status Obsolete
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Through Hole
Package TO-247-3
Case / Package TO-247 Long Leads
Family Name STGWA80
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -497-16007-5, STGWA80H65DFB-ND, 497-16007-5
Quantity per package 30
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898008-STGWA80H65DFB
Ultra Librarian 3D Model Ultra Librarian STGWA80H65DFB CAD Model

Description

STGWA80H65DFB - High-Efficiency Power MOSFET by STMicroelectronics

The STGWA80H65DFB is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a globally recognized leader in semiconductor solutions. This device is part of STMicroelectronics' advanced MDmesh™ DM6 series, which is specifically engineered to provide high efficiency in various power conversion applications.

With a breakdown voltage of 650V, the STGWA80H65DFB is tailored for high-performance solutions that demand reliable and robust components. The MOSFET is built using ST's innovative fast-recovery diode technology, which significantly enhances its switching performance and reduces energy losses, making it an ideal choice for high-efficiency power supplies, lighting applications, solar inverters, welding equipment, and other high-power applications.

Key features of the STGWA80H65DFB include:

  • Low on-resistance (RDS(on)): This MOSFET offers a very low on-state resistance, which minimizes conduction losses and improves overall efficiency.
  • Fast-switching speed: The device's fast-switching characteristics ensure reduced switching losses, which is crucial for high-frequency operations.
  • High junction temperature capability: With a maximum operating junction temperature of 150°C, the STGWA80H65DFB can handle high thermal and power loads.
  • Enhanced dv/dt capability: The MOSFET is designed to withstand high voltage transients, providing reliable performance under harsh conditions.

The STGWA80H65DFB comes in a HiP247™ package, which is known for its high power density and excellent thermal performance. The package is designed to offer improved heat dissipation, which is vital for maintaining stability and longevity in power-intensive applications.

STMicroelectronics has also taken steps to ensure that the STGWA80H65DFB meets environmental standards. The device is compliant with the RoHS directive, which restricts the use of certain hazardous substances in electronic equipment.

Overall, the STGWA80H65DFB is a powerful and reliable component that offers a combination of high efficiency, fast switching, and robust thermal performance, making it an excellent choice for designers and engineers looking to optimize their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7740 $52.7060
44+ $2.2761 $100.1484
69+ $2.2050 $152.1450
94+ $2.1338 $200.5772
122+ $2.0627 $251.6494
163+ $1.8493 $301.4359
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,500 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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