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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr STMicroelectronics
Series HB2
Package Tube
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Power - Max 147 W
Switching Energy 265µJ (on), 214µJ (off)
Input Type Standard
Gate Charge 56 nC
Td (on/off) @ 25°C 16ns/78.8ns
Test Condition 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 215 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376609-STGWA20H65DFB2
Ultra Librarian 3D Model Ultra Librarian STGWA20H65DFB2 CAD Model

Description

The STGWA20H65DFB2 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) produced by STMicroelectronics, a leader in the semiconductor industry. This high-speed switch is designed for a wide range of power applications, particularly well-suited for high-efficiency converters and energy-saving systems. The STGWA20H65DFB2 is characterized by its trench gate and field-stop structure, which enhances the device's performance in terms of switching speed and energy efficiency.

Key Features:

  • Maximum Collector-Emitter Voltage (V<sub>CE): 650V
  • Collector Current (I<sub>C): 20A at 25°C
  • Low On-Voltage Drop (V<sub>CE(sat)) for reduced conduction losses
  • High-speed switching with low turn-off switching losses
  • Short-circuit withstand time of 10μs
  • Co-packaged with a fast and soft recovery anti-parallel diode
  • High-frequency operation up to 30 kHz
  • Low thermal resistance
  • Optimized for hard-switching applications

Applications:

  • Welding equipment
  • Uninterruptible Power Supplies (UPS)
  • Solar inverters
  • Induction heating systems
  • High-performance power converters

With its robust design, the STGWA20H65DFB2 ensures reliability and longevity, making it an ideal choice for demanding power applications. The IGBT's trench gate field-stop technology allows for a fine balance between conduction and switching losses, thereby improving the overall efficiency of the system it is employed in. This device is tailored for applications requiring high power density and can handle significant current and voltage without compromising performance.

The integration of a fast and soft recovery diode in the same package not only simplifies the design but also reduces the bill of materials for power electronic systems. The STGWA20H65DFB2 is also remarkable for its ability to operate at high frequencies, which is beneficial for applications where space and weight are critical, and high switching frequencies can lead to smaller and lighter passive components.

Whether it's for renewable energy systems, such as solar inverters, or for robust industrial applications, such as welding equipment and UPS, the STGWA20H65DFB2 from STMicroelectronics is an excellent choice for engineers looking to enhance system performance and reliability.

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