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STGW30NC60KD

Part No STGW30NC60KD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description 30 A - 600 V - short circuit rugged IGBT
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series PowerMESH
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 60A
Current - Collector Pulsed (Icm) 125A
Vce(on) (Maximum) @ Vge, Ic 2.7V @ 15V, 20A
Power - Max 200W
Switching Energy 350μJ (on), 435μJ (off)
Input Type Standard
Gate Charge 96nC
Td (on/off) @ 25°C 29ns/120ns
Test Condition 480V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) 40ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247-3
Win Source Part Number 1261042-STGW30NC60KD
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STGW30NC60KD
Introduction Date October 24, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian STGW30NC60KD CAD Model

Description

STGW30NC60KD - IGBT from STMicroelectronics

The STGW30NC60KD is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics, a global leader in semiconductor solutions. This IGBT is designed to combine the high-efficiency attributes of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The STGW30NC60KD is an optimal choice for a wide range of high-power applications such as motor drives, uninterruptible power supplies (UPS), induction heating, and power factor correction circuits.

With a collector-emitter voltage rating of 600V and a collector current rating of 30A, this device can handle significant power levels while maintaining efficiency and reliability. The STGW30NC60KD is characterized by its low on-state voltage drop due to the utilization of STMicroelectronics' advanced trench gate field-stop technology, which significantly improves the device's conduction performance.

The device offers a maximum junction temperature of 175°C, allowing for robust operation even under high-temperature conditions. Additionally, it features a very low collector-emitter saturation voltage (V<sub>CE(sat)) and a minimal total switching energy (E<sub>off), which contribute to reduced power dissipation and improved overall efficiency in power switching applications.

The STGW30NC60KD is housed in a TO-247 long leads package, providing excellent thermal performance and making it suitable for high-power density designs. The package is designed for easy mounting on heat sinks, which is critical for maintaining thermal stability and extending the service life of the device.

Moreover, this IGBT is equipped with a co-packaged fast recovery diode, which ensures fast switching speeds and further enhances the performance during high-frequency operations. The combination of these features makes the STGW30NC60KD a highly reliable and efficient solution for designers looking to optimize their power management systems.

STMicroelectronics also provides comprehensive technical support and documentation for the STGW30NC60KD, making the design-in process as straightforward as possible. This support, combined with the device's performance features, ensures that it remains a preferred choice for engineers and professionals seeking high-quality IGBT solutions.

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36+ $2.8562 $102.8232
55+ $2.7669 $152.1795
75+ $2.6777 $200.8275
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130+ $2.3206 $301.6780
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