STGW25H120DF2 - High-Speed IGBT from STMicroelectronics

The STGW25H120DF2 is a state-of-the-art insulated gate bipolar transistor (IGBT) designed and manufactured by STMicroelectronics. This IGBT is tailored for high efficiency and fast switching applications, making it an ideal choice for a variety of power electronics systems. With a 1200 V collector-emitter breakdown voltage and a 25 A collector current rating, the STGW25H120DF2 is well-suited for demanding environments where high power density and reliability are paramount.

Constructed with STMicroelectronics' advanced trench gate field-stop technology, the STGW25H120DF2 offers reduced conduction and switching losses. This technology enables the device to operate at higher frequencies with improved thermal performance, which is critical for energy-saving applications. The IGBT is also equipped with a co-packaged fast recovery diode, ensuring efficient freewheeling operations and further enhancing the overall system efficiency.

The robustness of the STGW25H120DF2 is complemented by its maximum junction temperature of 175°C, allowing for stable operation even under high temperature conditions. This feature is especially beneficial for applications that are exposed to harsh environments or that require a compact design with minimal cooling infrastructure.

Key features of the STGW25H120DF2 include:

• Collector-emitter breakdown voltage (V<sub>CE) of 1200 V
• Continuous collector current (I<sub>C) of 25 A at 25°C
• Low on-voltage drop (V<sub>CE(sat)) for higher efficiency
• High-speed switching capabilities
• Co-packaged with a fast recovery anti-parallel diode
• High maximum junction temperature (T<sub>j) of 175°C
• Low gate charge and minimized internal capacitances for faster switching
• Compliance with RoHS and Halogen-free directives

Applications for the STGW25H120DF2 are diverse and include solar inverters, uninterruptible power supplies (UPS), motor drives, welding equipment, and high-frequency converters. Its reliability and performance make it an excellent choice for designers looking to optimize their power systems for both efficiency and cost-effectiveness.

STMicroelectronics provides comprehensive technical support and documentation for the STGW25H120DF2, ensuring that integrating this IGBT into your power systems is as straightforward as possible. With its exceptional performance and robust design, the STGW25H120DF2 stands out as a top-tier component for any power electronic application requiring high voltage and current handling capabilities.