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STGP14NC60KD

Part No STGP14NC60KD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 25A
Pulsed Collector Current 50A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 7A
Maximum Power Dissipation 80W
Total Switching Energy(Ets) 82μJ (on), 155μJ (off)
Input Type Standard
Gate Charge 34.4nC
Turn-on and Turn-off delay time 22.5ns/116ns
Testing Conditions 390V, 7A, 10 Ohm, 15V
Reverse Recovery Time (trr) 37ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 1103035-STGP14NC60KD
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STGP14NC60KD
Introduction Date June 14, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian STGP14NC60KD CAD Model

Description

STGP14NC60KD - IGBT from STMicroelectronics

The STGP14NC60KD is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics, a global leader in semiconductor solutions. Designed for high efficiency and fast switching, it is an ideal choice for a wide range of applications, including motor drives, uninterruptible power supplies (UPS), inverter welding machines, and high-frequency converters.

This IGBT features a robust and cost-effective field stop trench technology that not only enhances its performance but also ensures its reliability and longevity. With a maximum collector-emitter voltage (V<sub>CE) of 600V, it can handle high voltage operations with ease, making it suitable for medium power applications. The STGP14NC60KD is capable of providing a continuous collector current (I<sub>C) of 14A at 25°C, and a pulsed collector current (I<sub>CM) of 56A, which allows it to drive substantial loads efficiently.

One of the key advantages of the STGP14NC60KD is its low on-voltage drop (V<sub>CE(sat)) of typically 2.1V at I<sub>C=14A and V<sub>GE=15V, which translates into reduced conduction losses and improved power efficiency. Additionally, the device boasts a low gate charge (Q<sub>g), which minimizes switching losses and enables faster switching frequencies, contributing to the overall efficiency of the system in which it is employed.

The IGBT is packaged in a TO-220 package, which is widely used for power devices and offers good thermal performance. This package allows for easy mounting on a printed circuit board (PCB) and is compatible with standard assembly processes. The STGP14NC60KD also features a maximum junction temperature (T<sub>J) of 175°C, providing a generous thermal margin for various operating conditions.

In conclusion, the STGP14NC60KD from STMicroelectronics is a high-performance IGBT that combines fast switching, high efficiency, and reliability. Its robust design and electrical characteristics make it an excellent choice for designers seeking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.2664 $51.1968
29+ $3.5007 $101.5203
45+ $3.3913 $152.6085
61+ $3.2819 $200.1959
79+ $3.1725 $250.6275
106+ $2.8443 $301.4958
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Availability: 800 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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