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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series PowerMESH™
Package Tape & Reel
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 13 A
Current - Collector Pulsed (Icm) 25 A
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 3A
Power - Max 50 W
Switching Energy 46.5µJ (on), 23.5µJ (off)
Input Type Standard
Gate Charge 12 nC
Td (on/off) @ 25°C 6.7ns/46ns
Test Condition 390V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr) 30 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number STGDL6
Other Names 497-7990-2,497-7990-1,1805-STGDL6NC60DT4DKR,497-7990-6,-497-7990-6,1805-STGDL6NC60DT4TR,-497-7990-1,-497-7990-2,1026-STGDL6NC60DT4,STGDL6NC60DT4,1805-STGDL6NC60DT4CT
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277357-STGDL6NC60DT4
Ultra Librarian 3D Model Ultra Librarian STGDL6NC60DT4 CAD Model

Description

STGDL6NC60DT4 - STMicroelectronics Power MOSFET

The STGDL6NC60DT4 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics. This device is part of the MDmesh™ series, which is well-known for its outstanding efficiency and performance in high-voltage power applications. The STGDL6NC60DT4 is particularly suitable for switch mode power supplies (SMPS), lighting applications, especially LED drivers, as well as for high-performance DC-AC inverters used in solar energy systems and uninterrupted power supplies (UPS).

Key Features:

  • Low On-Resistance: The MOSFET features a very low on-state resistance (R<sub>DS(on)), which enhances its efficiency by minimizing conduction losses.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of up to 600V, it can handle high voltage applications with ease.
  • Fast Switching Speed: The STGDL6NC60DT4 is designed for fast switching, which is crucial for reducing switching losses and improving the performance of power electronic systems.
  • Improved dv/dt Capability: This power MOSFET is capable of withstanding high voltage transients, which is essential for reliable operation in environments with high electrical noise.
  • Low Gate Charge: A low total gate charge (Q<sub>g) reduces the energy required to turn the MOSFET on and off, thereby saving power and extending the life of the device.
  • Ruggedness: Its rugged design ensures reliability and a long operational life, even under stressful conditions.
  • TO-220 Package: The device comes in a TO-220 package, which is known for its good thermal performance and ease of mounting on a printed circuit board (PCB).

Applications:

The versatility of the STGDL6NC60DT4 allows it to be used in a wide array of applications. Some of the primary uses include power supply units where efficiency and reliability are paramount, motor control systems requiring precise power modulation, and renewable energy setups, particularly in solar inverters where high voltage and fast switching are necessary. Its robustness and efficiency also make it an excellent choice for industrial applications and automotive systems where durability and performance are critical.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.3802 $69.0100
115+ $1.1325 $130.2375
180+ $1.0972 $197.4960
245+ $1.0616 $260.0920
320+ $1.0264 $328.4480
425+ $0.9202 $391.0850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 80 pieces
MOQ: 50 pcs
Order Increment : 1 piece
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