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STGD6NC60HDT4

Part No STGD6NC60HDT4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 15A 56W DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 15A
Pulsed Collector Current 21A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 3A
Maximum Power Dissipation 56W
Total Switching Energy(Ets) 20μJ (on), 68μJ (off)
Input Type Standard
Gate Charge 13.6nC
Turn-on and Turn-off delay time 12ns/76ns
Testing Conditions 390V, 3A, 10 Ohm, 15V
Reverse Recovery Time (trr) 21ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Win Source Part Number 1103018-STGD6NC60HDT4
Popularity Medium
Supply and Demand Status Limited
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian STGD6NC60HDT4 CAD Model

Description

STGD6NC60HDT4 - N-Channel 600V - 6A - DPAK STripFET™ II Power MOSFET

The STGD6NC60HDT4 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed for applications requiring high voltage capability, fast switching, and low on-resistance. This Power MOSFET is part of the STripFET™ II series, which is renowned for its excellent efficiency and thermal performance. It is housed in a DPAK (TO-252) package, which is well-suited for compact designs and surface mount technology.

With a drain-source voltage (V<sub>DS) of 600V, the STGD6NC60HDT4 is ideal for high-voltage applications such as switch-mode power supplies, lighting applications including LED drivers, motor control, and power management tasks. Its 6A continuous drain current (I<sub>D) ensures that it can handle significant power without overheating, making it a reliable choice for demanding environments.

The device features a low gate charge (Q<sub>g) and low crss (reverse transfer capacitance), which translates to faster switching speeds. This is particularly beneficial in applications where efficiency is key, and switching losses need to be minimized. The low on-resistance (R<sub>DS(on)) of the MOSFET is another standout feature, which reduces conduction losses and improves overall power efficiency.

Further enhancing its performance, the STGD6NC60HDT4 boasts a 100% avalanche tested design, providing additional reliability and robustness in applications where the device may be subjected to high-energy pulses. The MOSFET also includes an intrinsic fast-recovery body diode, which is crucial for high-speed switching applications that require a diode with minimal recovery time.

STMicroelectronics has designed the STGD6NC60HDT4 with the environment in mind. The device is compliant with the European Union directives on the restriction of hazardous substances (RoHS), ensuring that it does not contain materials that are harmful to the environment.

In summary, the STGD6NC60HDT4 Power MOSFET is a versatile and robust component that offers high voltage capacity, fast switching, low on-resistance, and excellent thermal performance, making it suitable for a wide range of high-efficiency applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2041 $54.1845
105+ $0.9880 $103.7400
160+ $0.9571 $153.1360
220+ $0.9263 $203.7860
280+ $0.8954 $250.7120
375+ $0.8028 $301.0500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 199,805 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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