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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tape & Reel
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Power - Max 260 W
Switching Energy 350µJ (on), 400µJ (off)
Input Type Standard
Gate Charge 105 nC
Td (on/off) @ 25°C 50ns/160ns
Test Condition 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 110 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number STGB30
Other Names 497-15119-6,-497-15119-6,497-15119-2,-497-15119-1,497-15119-1,-497-15119-2
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277397-STGB30H60DF
Ultra Librarian 3D Model Ultra Librarian STGB30H60DF CAD Model

Description

The STGB30H60DF is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a leader in semiconductor solutions. This IGBT is designed for high efficiency and fast switching applications, making it a popular choice for a wide range of power electronics systems.

Key Features

  • Voltage Rating: The device boasts a robust collector-emitter voltage (V<sub>CE) of 600V, providing ample headroom for high voltage operations.
  • Current Capability: It can handle a continuous collector current (I<sub>C) of 30A, ensuring reliable performance under heavy load conditions.
  • High-Speed Switching: With a maximum switching frequency, the STGB30H60DF is optimized for applications requiring rapid on-off cycles, reducing energy losses and improving efficiency.
  • Low Saturation Voltage: The low V<sub>CE(sat) minimizes on-state power dissipation, contributing to the overall efficiency of the system.
  • Co-Packaged Diode: This IGBT comes with an integrated fast recovery diode, providing protection against reverse voltage transients and reducing component count in circuit designs.

Applications

The versatility of the STGB30H60DF allows it to be utilized in a variety of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Factor Correction (PFC) circuits
  • Inductive Heating
  • Switched Mode Power Supplies (SMPS)
  • Welding Equipment

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STGB30H60DF is built to meet stringent standards, ensuring reliability and performance in demanding environments. This IGBT is a testament to STMicroelectronics' dedication to excellence in power electronics.

Conclusion

The STGB30H60DF from STMicroelectronics is a powerful and efficient IGBT, designed for high-speed switching and high-voltage applications. Its integrated diode, low saturation voltage, and high current handling capabilities make it an ideal choice for designers looking to enhance system performance while maintaining energy efficiency. Whether for industrial, commercial, or consumer applications, the STGB30H60DF stands out as a top-performing component in power management and conversion technologies.

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