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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tape & Reel
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
Power - Max 167 W
Switching Energy 200µJ (on), 130µJ (off)
Input Type Standard
Gate Charge 116 nC
Td (on/off) @ 25°C 38ns/149ns
Test Condition 400V, 20A, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263)
Base Product Number STGB20
Other Names 497-14977-2,497-14977-6,-497-14977-2,-497-14977-1,-497-14977-6,497-14977-1
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277396-STGB20V60F
Ultra Librarian 3D Model Ultra Librarian STGB20V60F CAD Model

Description

STGB20V60F - Power IGBT from STMicroelectronics

The STGB20V60F is a state-of-the-art power IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by STMicroelectronics, a global leader in semiconductor technology. This device is tailored for high-efficiency applications, particularly in the field of motor control, power supply, and inverter systems. It is well-suited for hard switching applications up to 20 kHz.

Key Features:

  • Voltage Rating: The STGB20V60F boasts a collector-emitter voltage (V<sub>CE) of 600V, providing ample headroom for high-voltage applications.
  • Current Capacity: It has a continuous collector current (I<sub>C) rating of 40A at 25°C, ensuring robust performance for demanding power applications.
  • Low On-Resistance: With a low on-state voltage (V<sub>CE(sat)), this IGBT ensures reduced conduction losses, enhancing overall system efficiency.
  • High-Speed Switching: The STGB20V60F is capable of fast switching speeds, making it suitable for high-frequency operations.
  • Co-Packaged Diode: It comes with a co-packaged fast recovery anti-parallel diode, which simplifies circuit design and enhances performance.
  • Temperature Resilience: The device can operate at junction temperatures ranging from -40°C to +175°C, ensuring reliability across a wide range of environmental conditions.

Applications:

The versatility of the STGB20V60F allows it to be utilized in various high-power applications, including but not limited to:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Factor Correction (PFC) circuits
  • Induction Heating
  • Solar Inverters
  • Welding Equipment

Quality and Reliability:

STMicroelectronics is committed to delivering high-quality products. The STGB20V60F is built to meet stringent industry standards, ensuring both reliability and performance. It is available in a TO-263 package, which is designed for optimal thermal performance and compatibility with standard mounting techniques.

For detailed specifications, application notes, and additional resources, engineers and designers are encouraged to consult the official STMicroelectronics datasheets and product documentation.

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