The STFI13N80K5 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This device is part of the MDmesh™ K5 series, which is well-suited for high-efficiency applications due to its excellent on-state resistance (R<sub>DS(on)) and low gate charge (Q<sub>g).

Key Features

• Voltage Rating: The STFI13N80K5 boasts an 800V drain-source breakdown voltage (V<sub>DSS), which makes it ideal for high-voltage applications.
• Current Handling: With a continuous drain current (I<sub>D) of up to 11 A, this MOSFET can handle significant power without overheating.
• Low On-Resistance: The device offers a low on-state resistance of 0.68 Ohm typ., ensuring efficient power conversion and minimal losses.
• Fast Switching: A low gate charge and capacitance provide fast switching capabilities, improving performance in power conversion applications.
• High dv/dt Capability: Designed to withstand high voltage transients, this MOSFET is robust against harsh operating conditions.
• Package: The STFI13N80K5 is available in the I²PAK (TO-262) package, which is suitable for through-hole mounting, providing strong mechanical attachment and heat dissipation.

Applications

The STFI13N80K5 is designed for a range of applications that require high efficiency and power density. It is particularly well-suited for:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC/DC Converters
• Welding Equipment
• Uninterruptible Power Supplies (UPS)
• Motor Drive Controllers

Conclusion

With its robust design and superior electrical characteristics, the STFI13N80K5 from STMicroelectronics is an excellent choice for designers looking to improve efficiency, reduce power losses, and ensure reliability in high-voltage power applications. Its combination of high voltage capability, low resistance, and fast switching makes it a versatile component for a wide array of industrial and consumer electronics.