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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 29A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 110mOhm at 14.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 80.4nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 2785pF at 50V
Power Dissipation (Maximum) 40W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260971-STF34NM60ND
Manufacturer Homepage www.st.com
Family Name STF34NM60ND
Introduction Date November 04, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF34NM60ND CAD Model

Description

STF34NM60ND - N-channel MOSFET by STMicroelectronics

The STF34NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to target a wide range of applications, including switch-mode power supplies (SMPS), lighting, DC-AC converters, motor control, and power management tasks.

With its state-of-the-art MDmesh™ technology, the STF34NM60ND boasts a very low on-resistance (R<sub>DS(on)) combined with a high breakdown voltage, making it an efficient choice for high-power applications. The device is capable of handling continuous drain currents up to 28 A, and its drain-source voltage (V<sub>DSS) rating of 600 V ensures reliable operation even under high voltage conditions.

The STF34NM60ND is also characterized by its fast switching performance, which is essential for reducing switching losses and improving overall efficiency. This is particularly beneficial in applications requiring high-frequency operation. Additionally, the device features a low gate charge (Q<sub>g), which further enhances its switching performance.

This MOSFET comes in a TO-220FP package, which offers a good balance between thermal performance and size, making it suitable for compact designs without compromising on power dissipation capabilities. The package is designed to be robust and reliable, ensuring a long operational life even in demanding conditions.

The STF34NM60ND also includes inherent protections against various conditions. Its avalanche ruggedness is guaranteed, providing designers with a margin of safety against unexpected voltage spikes. Moreover, the device is 100% avalanche tested, ensuring that each unit meets STMicroelectronics' high-quality standards.

In summary, the STF34NM60ND is an excellent choice for designers looking for a power MOSFET that combines high voltage capability, low on-resistance, fast switching, and ruggedness. It's a versatile component that can be used in a variety of power applications, delivering both performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $8.1990 $65.5920
20+ $6.7274 $134.5480
30+ $6.5172 $195.5160
42+ $6.3069 $264.8898
54+ $6.0967 $329.2218
71+ $5.4659 $388.0789
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 7,600 pieces
MOQ: 8 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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