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STF18N60DM2

Part No STF18N60DM2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description MOSFET N-CH 600V 13A TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 13A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 295mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 20nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 800pF at 100V
Power Dissipation (Maximum) 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 716430-STF18N60DM2
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF18N60DM2 CAD Model

Description

The STF18N60DM2 from STMicroelectronics is a state-of-the-art N-channel Power MOSFET designed to meet the rigorous demands of today's power electronic applications. This device is a part of the MDmesh™ DM2 series, which utilizes an innovative proprietary vertical structure to deliver exceptionally low on-resistance (RDS(on)) and reduced gate charge (Qg), enhancing the overall efficiency of power conversion systems.

Key Features

  • High Voltage Capability: With a drain-source voltage (VDS) of up to 600V, this MOSFET can handle high voltage applications, making it suitable for a wide range of power supply and conversion systems.
  • Low On-Resistance: The STF18N60DM2 boasts a low RDS(on) which translates to reduced conduction losses and improved power efficiency.
  • Fast Switching Performance: Fast switching speeds are achieved thanks to its low gate charge and capacitance, which is critical for high-frequency power converters.
  • High Current Capacity: It supports a continuous drain current (ID) up to 13A, making it capable of handling high current loads.
  • Enhanced Robustness: The device features a robust body diode which can handle high-speed switching and reverse recovery, thus ensuring reliable operation under harsh conditions.
  • Reduced Gate Drive Loss: The low gate charge (Qg) helps in minimizing the losses associated with driving the gate, further enhancing the overall efficiency.

Applications

The STF18N60DM2 is highly versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Applications
  • High-Efficiency DC-DC Converters
  • Solar Inverters
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)
  • Motor Drive Controllers

Package and Quality

Encased in a TO-220FP package, the STF18N60DM2 is designed to offer optimal thermal performance and is suitable for through-hole mounting, which is advantageous for applications requiring robust mechanical mounting. STMicroelectronics is committed to delivering high-quality products, and this MOSFET is no exception, as it is manufactured to meet the highest industry standards for performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5590 $51.1800
42+ $2.3940 $100.5480
65+ $2.3114 $150.2410
94+ $2.1463 $201.7522
122+ $2.0638 $251.7836
152+ $1.9812 $301.1424
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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