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STF12N120K5

Part No STF12N120K5
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Ultra low gate charge | MOSFET N-CH 1200V 12A TO-220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1200V
Id - Continuous Drain Current 12A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 690mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 44.2nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1370pF at 100V
Power Dissipation (Maximum) 40W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260932-STF12N120K5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF12N120K5 CAD Model

Description

The STF12N120K5 is a state-of-the-art N-channel MOSFET produced by STMicroelectronics, a leader in the semiconductor industry. This MOSFET is a part of the MDmesh™ K5 series which is well-known for its high efficiency and performance in a wide range of applications. The STF12N120K5 is designed to meet the increasing demands for energy efficiency and power density in modern electronic circuits.

Key Features

  • Voltage Rating: The device boasts a high breakdown voltage of 1200 V, making it ideal for high voltage applications.
  • Low On-Resistance: With an on-resistance of just 0.52 ohms, the STF12N120K5 ensures minimal power loss and better conductivity.
  • Current Capacity: It can handle a continuous drain current of up to 11 A, suitable for various power applications.
  • Enhanced Switching Performance: The fast recovery diode and reduced capacitances contribute to the enhanced switching performance, reducing switching losses.
  • High dv/dt Capability: The device is capable of withstanding high voltage transients, making it robust against harsh operating conditions.
  • Low Gate Charge: A low gate charge facilitates faster switching, which is critical for high-efficiency power converters.

Applications

The STF12N120K5 MOSFET is suitable for a broad range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC/DC Converters
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)
  • Motor Drives

Advanced Technology

Utilizing STMicroelectronics' innovative MDmesh™ K5 technology, the STF12N120K5 offers reduced on-state resistance and lower switching losses. This technology combines the benefits of reduced gate charge and minimized recovery time, which makes the MOSFET an excellent choice for high-efficiency applications.

Reliability and Quality

STMicroelectronics ensures that the STF12N120K5 meets the highest quality and reliability standards. The device is subjected to rigorous testing and quality control processes, guaranteeing performance and durability in even the most demanding situations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.8098 $59.2392
9+ $13.8544 $124.6896
13+ $13.3767 $173.8971
19+ $12.4211 $236.0009
25+ $11.9434 $298.5850
31+ $11.4657 $355.4367
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 237 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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